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TPA3220 Datasheet(PDF) 6 Page - Texas Instruments |
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TPA3220 Datasheet(HTML) 6 Page - Texas Instruments |
6 / 39 page 6 TPA3220 SLASEN3 – JANUARY 2018 www.ti.com Product Folder Links: TPA3220 Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated (1) VDD must be connected to a supply of 5V in LDO bypass mode; OR 7V to 30V with LDO active. VDD can be connected directly to PVDD in LDO bypass mode, but must not exceed PVDD voltage. 7.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN TYP MAX UNIT PVDD Power-stage supply DC supply voltage 7 30 32 V VDD(1) Supply voltage for internal LDO regulator to supply GVDD and AVDD DC supply voltage 7 32 V External supply for VDD, GVDD and AVDD. Internal LDO bypassed DC supply voltage 4.5 5 5.5 V AVDD Supply voltage for analog circuits DC supply voltage 4.5 5 5.5 V GVDD Supply voltage for gate-drive circuitry DC supply voltage 4.5 5 5.5 V LOUT(BTL) Output filter inductance Minimum output inductance at IOC 5 10 μH LOUT(PBTL) Output filter inductance, PBTL before the LC filter Minimum output inductance at IOC 5 10 Output filter inductance, PBTL after the LC filter Minimum output inductance at half IOC , each inductor 5 10 FPWM PWM frame rate selectable for AM interference avoidance; 1% Resistor tolerance Nominal 575 600 625 kHz AM1 510 533 555 AM2 460 480 500 R(FREQ_ADJ) PWM frame rate programming resistor Nominal; Master mode 49.5 50 50.5 k Ω AM1; Master mode 29.7 30 30.3 AM2; Master mode 9.9 10 10.1 CPVDD PVDD close decoupling capacitors 1.0 μF V(FREQ_ADJ) Voltage on FREQ_ADJ pin for slave mode operation Slave Mode (Connect to AVDD) 5 V (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 7.4 Thermal Information THERMAL METRIC(1) TPA3220 UNIT DDW 44-PINS HTSSOP JEDEC STANDARD 4 LAYER PCB RθJA Junction-to-ambient thermal resistance 23.5 °C/W RθJC(top) Junction-to-case (top) thermal resistance 11.1 °C/W RθJB Junction-to-board thermal resistance 4.5 °C/W ψJT Junction-to-top characterization parameter 0.2 °C/W ψJB Junction-to-board characterization parameter 4.5 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 1.1 °C/W |
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