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K4N26323AE Datasheet(PDF) 20 Page - Samsung semiconductor |
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K4N26323AE Datasheet(HTML) 20 Page - Samsung semiconductor |
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20 / 52 page  - 20 - Rev. 1.7 (Jan. 2003) 128M GDDR2 SDRAM K4N26323AE-GC Precharge Command The Precharge Command is used to precharge or close a bank that has been activated. The Precharge Command is triggered when CS, RAS and WE are low and CAS is high at the rising edge of the clock. The Precharge Command can be used to precharge each bank independently or all banks simultaneously. Three address bits A8, BA0 and BA1 are used to define which bank to precharge when the command is issued. Bank Selection for Precharge by Address Bits Burst Read Operation Followed by Precharge For the earliest possible precharge, the precharge command may be issued on the rising edge which is CAS latency (CL) clock cycles before the end of the read burst. A new bank active (command) may be issued to the same bank after the RAS precharge time (tRP). A precharge command cannot be issued until tRAS is satisfied. A8 BA1 BA0 Precharged Bank(s) LOW LOW LOW Bank 0 only LOW LOW HIGH Bank 1 only LOW HIGH LOW Bank 2 only LOW HIGH HIGH Bank 3 only HIGH DON’T CARE DON’T CARE All Banks 0 ~ 3 CL =7 Burst Read Operation Followed by Precharge: RL = 7 (AL=0, CL=7), tRP= 8 03 2 567 89 10 11 Precharge NOP NOP NOP NOP NOP Active Bank A NOP NOP DQ CK, CK DQS CMD READ A Post CAS 4 > = tRP NOP DOUTA0 DOUTA1 DOUTA2 DOUTA3 |
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