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K4N26323AE Datasheet(PDF) 9 Page - Samsung semiconductor |
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K4N26323AE Datasheet(HTML) 9 Page - Samsung semiconductor |
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9 / 52 page  - 9 - Rev. 1.7 (Jan. 2003) 128M GDDR2 SDRAM K4N26323AE-GC Self Auto Idle MRS EMRS Row Precharge Power Write Power ACT Read A Read REFS REFSX REFA CKEL MRS CKEH CKEH CKEL Write Power Applied Automatic Sequence Command Sequence Read A Write A Read PRE PRE PRE PRE Refresh Refresh Down Power Down Active On A Read A Read A Write A PREALL Active Precharge Precharge PREALL Read Write PREALL = Precharge All Banks MRS = Mode Register Set EMRS = Extended Mode Register Set REFS = Enter Self Refresh REFSX = Exit Self Refresh REFA = Auto Refresh CKEL = Enter Power Down CKEH = Exit Power Down ACT = Active Write A = Write with Autoprecharge Read A = Read with Autoprecharge PRE = Precharge FUNTIONAL DESCRIPTION Simplified State Diagram DLL Enable Write |
Similar Part No. - K4N26323AE |
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Similar Description - K4N26323AE |
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