K4N26323AE datasheet(52/52 Pages) SAMSUNG

Part #	K4N26323AE

Description	128Mbit GDDR2 SDRAM

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Manufacturer	SAMSUNG [Samsung semiconductor]

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Rev. 1.7 (Jan. 2003)

128M GDDR2 SDRAM

K4N26323AE-GC

Temperature (Tj)

Typical

50

°C

Minimum

100

°C

Maximum

0

°C

Vdd/Vddq

Typical

2.5V

Minimum

2.4V

Maximum

2.6V

The above characteristics are specified under best, worst and normal process variation/conditions

Pulldown Current (mA)

Pullup Current (mA)

Voltage (V)

Typical

Minimum

Maximum

Typical

Minimum

Maximum

0.0

-7.3

-5.8

-8.7

7.6

6.1

9.2

0.1

-4.5

-3.7

-4.9

5.2

4.3

6.1

0.2

-2.0

-1.9

-1.4

2.9

2.7

3.2

0.3

-0.2

1.6

0.8

1.1

0.5

0.4

2.3

1.2

4.3

-1.1

-0.3

-2.1

0.5

4.1

2.5

6.7

-2.9

-1.6

-4.4

0.6

5.6

3.6

8.7

-4.5

-2.8

-6.5

0.7

6.9

4.6

10.4

-5.9

-3.9

-8.3

0.8

8.0

5.5

11.7

-7.1

-4.9

-9.9

0.9

9.0

6.3

12.9

-8.3

-5.9

-11.3

1.0

9.9

7.0

14.0

-9.4

-6.8

-12.6

1.1

10.8

7.8

15.1

-10.5

-7.6

-13.9

1.2

11.7

8.5

16.1

-11.5

-8.5

-15.1

1.3

12.6

9.3

17.1

-12.5

-9.3

-16.3

1.4

13.5

10.0

18.1

-13.5

-10.1

-17.4

1.5

14.2

10.7

19.1

-14.5

-10.9

-18.5

1.6

15.2

11.4

20.1

-15.5

-11.7

-19.7

1.7

16.1

12.1

21.1

-16.4

-12.5

-20.8

1.8

16.9

12.8

22.1

-17.4

-13.3

-21.0

1.9

17.8

13.6

23.1

-18.3

-14.1

-23.0

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