K4N26323AE datasheet(44/52 Pages) SAMSUNG

Part #	K4N26323AE

Description	128Mbit GDDR2 SDRAM

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Manufacturer	SAMSUNG [Samsung semiconductor]

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44 / 52 page

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Rev. 1.7 (Jan. 2003)

128M GDDR2 SDRAM

K4N26323AE-GC

Temperature (Tj)

Typical

50

°C

Minimum

100

°C

Maximum

0

°C

Vdd/Vddq

Typical

2.5V

Minimum

2.4V

Maximum

2.6V

The above characteristics are specified under best, worst and normal process variation/conditions

Pulldown Current (mA)

Pullup Current (mA)

Voltage (V)

Typical

Minimum

Maximum

Typical

Minimum

Maximum

0.0

-7.2

-5.8

-8.6

7.6

6.1

9.1

0.1

-2.1

-1.4

3.1

2.9

3.4

0.2

2.5

1.1

5.0

-0.9

0.1

-2.0

0.3

6.4

3.9

10.6

-4.6

-2.5

-6.9

0.4

9.8

6.3

15.4

-7.9

-4.9

-11.5

0.5

12.7

8.3

19.5

-10.8

-6.9

-15.5

0.6

15.1

9.9

22.8

-13.4

-8.8

-19.1

0.7

16.9

11.2

25.3

-15.5

-10.3

-21.9

0.8

18.3

12.2

27.2

-17.3

-11.7

-24.3

0.9

19.5

13.1

28.7

-18.9

-12.9

-26.3

1.0

20.6

14.0

30.0

-20.4

-14.1

-28.1

1.1

21.6

14.8

31.2

-21.7

-15.2

-29.7

1.2

22.6

15.6

32.3

-23.0

-16.2

-31.3

1.3

23.5

16.4

33.4

-24.2

-17.2

-32.7

1.4

24.5

17.1

34.5

-25.4

-18.1

-34.2

1.5

25.4

17.9

35.5

-26.6

-19.1

-35.5

1.6

26.3

18.6

36.5

-27.7

-20.0

-36.9

1.7

27.1

19.4

37.6

-28.8

-20.9

-38.2

1.8

28.0

20.1

38.6

-29.9

-21.8

-39.5

1.9

28.9

20.9

39.6

-31.0

-22.7

-40.7

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