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K4N26323AE Datasheet(PDF) 41 Page - Samsung semiconductor |
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K4N26323AE Datasheet(HTML) 41 Page - Samsung semiconductor |
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41 / 52 page  - 41 - Rev. 1.7 (Jan. 2003) 128M GDDR2 SDRAM K4N26323AE-GC 1. The typical pulldown V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of Figure a. 2. The 30 ohm@ODT 60 ohm Fix variation in driver pulldown current from minimum to maximum process, temperature and voltage will lie within the outer bounding lines the of the V-I curve of Figure a. 3. The typical pullup V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of below Figure b. 4. The 30 ohm@ODT 60 ohm Fix variation pullup current from minimum to maximum process, temperature and voltage will lie within the outer bounding lines of the V-I curve of Figrue b. 5. The 30 ohm@ODT 60 ohm fix variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7, for device drain to source voltage from 0 to VDDQ/2 6. The 30 ohm@ODT 60 ohm fix variation in the ratio of the nominal pullup to pulldown current should be unity ±10%, for device drain to source voltages from 0 to VDDQ/2 30 ohm Driver @ ODT 60 ohm Fix. Maximum Typical Minumum Vout(V) Minimum Typical Maximum Figure b : PulluP Charateristics Figure a : Pulldown Charateristics Vout(V) -20 -10 0 10 20 30 40 50 60 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 -60 -50 -40 -30 -20 -10 0 10 20 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 |
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