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TM893CBK32 Datasheet(PDF) 6 Page - Texas Instruments

Part # TM893CBK32
Description  DYNAMIC RAM MODULE
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

TM893CBK32 Datasheet(HTML) 6 Page - Texas Instruments

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TM893CBK32, TM893CBK32S
8388608 BY 32-BIT
DYNAMIC RAM MODULE
SMMS652A – FEBRUARY 1995 – REVISED JUNE 1995
6
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
capacitance over recommended ranges of supply voltage and operating free-air temperature,
f = 1 MHz (see Note 5)
PARAMETER
’893CBK32
UNIT
PARAMETER
MIN
MAX
UNIT
Ci(A)
Input capacitance, A0 – A10
80
pF
Ci(R)
Input capacitance, RAS inputs
28
pF
Ci(C)
Input capacitance, CAS inputs
28
pF
Ci(W)
Input capacitance, W
112
pF
Co(DQ) Output capacitance on DQ pins
14
pF
NOTE 5: VCC = 5 V ± 0.5 V and the bias on pins under test is 0 V.
switching characteristics over recommended ranges of supply voltage and operating free-air
temperature
PARAMETER
’893CBK32-60
’893CBK32-70
’893CBK32-80
UNIT
PARAMETER
MIN
MAX
MIN
MAX
MIN
MAX
UNIT
tAA
Access time from column-address
30
35
40
ns
tCAC
Access time from CAS low
15
18
20
ns
tCPA
Access time from column precharge
35
40
45
ns
tRAC
Access time from RAS low
60
70
80
ns
tCLZ
CAS to output in the low-impedance state
0
0
0
ns
tOH
Output disable from start of CAS high
3
3
3
ns
tOFF
Output disable time after CAS high (see Note 6)
0
15
0
18
0
20
ns
NOTE 6: tOFF is specified when the output is no longer driven.
timing requirements over recommended ranges of supply voltage and operating free-air
temperature
’893CBK32-60
’893CBK32-70
’893CBK32-80
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
UNIT
tRC
Cycle time, random read or write (see Note 7)
110
130
150
ns
tPC
Cycle time, page-mode read or write (see Notes 7 and 8)
40
45
50
ns
tRASP
Pulse duration, page mode, RAS low
60
100 000
70
100 000
80
100 000
ns
tRAS
Pulse duration, nonpage mode, RAS low
60
10 000
70
10 000
80
10 000
ns
tCAS
Pulse duration, CAS low
15
10 000
18
10 000
20
10 000
ns
tCP
Pulse duration, CAS high (precharge)
10
10
10
ns
tRP
Pulse duration, RAS high (precharge)
40
50
60
ns
tWP
Pulse duration, W low
10
10
10
ns
tASC
Setup time, column address before CAS low
0
0
0
ns
tASR
Setup time, row address before RAS low
0
0
0
ns
tDS
Setup time, data before CAS low
0
0
0
ns
tRCS
Setup time, W high before CAS low
0
0
0
ns
tCWL
Setup time, W low before CAS high
15
18
20
ns
tRWL
Setup time, W low before RAS high
15
18
20
ns
tWCS
Setup time, W low before (precharge) CAS low
0
0
0
ns
tWRP
Setup time, W high before RAS low (CBR refresh only)
10
10
10
ns
NOTES:
7. All cycles assume tT = 5 ns.
8. To assure tPC min, tASC should be ≥ tCP.


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