Manufacturer | Part # | Datasheet | Description |
 Toshiba Semiconductor |
GT50J328
|
232Kb / 6P |
Current Resonance Inverter Switching Application Fourth Generation IGBT
|
GT35J321
|
290Kb / 6P |
Fourth-generation IGBT Current Resonance Inverter Switching Applications
|
GT30J322
|
257Kb / 5P |
N CHANNEL MOS TYPE ( THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS)
|
GT50J122
|
160Kb / 6P |
Current Resonance Inverter Switching Application
|
GT60J323H
|
182Kb / 6P |
Current Resonance Inverter Switching Application
|
 Mitsubishi Electric Sem... |
PS22056
|
119Kb / 9P |
1200V/25A low-loss 4th generation IGBT inverter bridge
|
 Toshiba Semiconductor |
GT40T301
|
166Kb / 6P |
Silicon N Channel IGBT Parallel Resonance Inverter Switching Applications
|
GT60N322
|
166Kb / 6P |
Silicon N Channel IGBT Voltage Resonance Inverter Switching Application
|
GT40Q323
|
150Kb / 6P |
Silicon N Channel IGBT Voltage Resonance Inverter Switching Application
|
GT60M323
|
168Kb / 6P |
Silicon N Channel IGBT Voltage Resonance Inverter Switching Application
|