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K4S641632H-TC70 Datasheet (PDF) - Samsung semiconductor

K4S641632H-TC70 Datasheet PDF - Samsung semiconductor
Part # K4S641632H-TC70
Download  K4S641632H-TC70 Download

File Size   144.64 Kbytes
Page   14 Pages
Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
Description 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free

K4S641632H-TC70 Datasheet (PDF)

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K4S641632H-TC70 Datasheet PDF - Samsung semiconductor

Part # K4S641632H-TC70
Download  K4S641632H-TC70 Click to download

File Size   144.64 Kbytes
Page   14 Pages
Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
Description 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free

K4S641632H-TC70 Datasheet (HTML) - Samsung semiconductor

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K4S641632H-TC70 Product details

GENERAL DESCRIPTION
The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, / 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

FEATURES
• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
   -. CAS latency (2 & 3)
   -. Burst length (1, 2, 4, 8 & Full page)
   -. Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• Burst read single-bit write operation
• DQM (x4,x8) & L(U)DQM (x16) for masking
• Auto & self refresh
• 64ms refresh period (4K cycle)



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