VBT1060C-M3 Datasheet(PDF) - Vishay Siliconix

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VBT1060C-M3 Datasheet (PDF) - Vishay Siliconix

VBT1060C-M3 Datasheet PDF - Vishay Siliconix


Part #	VBT1060C-M3

Download	VBT1060C-M3 Download

File Size	89.98 Kbytes

Page	4 Pages

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

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Description

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A

VBT1060C-M3 Datasheet (PDF)

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VBT1060C-M3 Datasheet PDF - Vishay Siliconix


Part #	VBT1060C-M3

Download	VBT1060C-M3 Click to download

File Size	89.98 Kbytes

Page	4 Pages

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

Logo

Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A

VBT1060C-M3 Datasheet (HTML) - Vishay Siliconix

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VBT1060C-M3 Product details

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C

Similar Part No. - VBT1060C-M3

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	VBT1060C-M3	102Kb / 4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 01-Jan-2022
	VBT1060C-M3	79Kb / 4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 14-May-13
	VBT1060C-M3	102Kb / 4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 01-Jan-2022

Similar Description - VBT1060C-M3

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	VT1060C-E3	156Kb / 6P	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A Revision: 14-Dec-16
	VT1060C-M3	133Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A Revision: 15-Dec-16
	V30100S	168Kb / 5P	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A Revision: 31-Jul-08
	VB30100S-M3	88Kb / 4P	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A Revision: 15-May-13
	VFT3080S-M3	89Kb / 4P	Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A Revision: 11-Sep-13
	VT3080S-E3	157Kb / 6P	Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A Revision: 14-Dec-16
	VBT3080S-M3	88Kb / 4P	Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A Revision: 14-May-13
	VB10170C-E3	93Kb / 4P	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 2.5 A Revision: 03-Jan-17
	VBT1045C-E3	90Kb / 4P	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 2.5 A Revision: 09-Sep-13
	VE1045C-E3	133Kb / 4P	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.37 V at IF = 2.5 A Revision: 20-Dec-13

About Vishay Siliconix

Vishay Siliconix is a subsidiary of Vishay Intertechnology, a global manufacturer of passive electronic components.
Vishay Siliconix specializes in the design, manufacturing, and marketing of power MOSFETs, IGBTs, and other power semiconductors.
The company was founded in 1962 and is headquartered in Santa Clara, California.
Vishay Siliconix provides power solutions for a variety of applications, including renewable energy systems, industrial equipment, computing and telecommunications, and automotive electronics.
The company's products are designed for high efficiency, low power consumption, and high reliability, and are manufactured in state-of-the-art facilities using advanced fabrication processes.
With a focus on innovation and customer satisfaction, Vishay Siliconix is committed to providing its customers with the best power management solutions to meet their needs.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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