V20100C-E3 Datasheet(PDF) - Vishay Siliconix

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V20100C-E3 Datasheet (PDF) - Vishay Siliconix

V20100C-E3 Datasheet PDF - Vishay Siliconix


Part #	V20100C-E3

Download	V20100C-E3 Download

File Size	167.08 Kbytes

Page	6 Pages

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

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Description

Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

V20100C-E3 Datasheet (PDF)

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V20100C-E3 Datasheet PDF - Vishay Siliconix


Part #	V20100C-E3

Download	V20100C-E3 Click to download

File Size	167.08 Kbytes

Page	6 Pages

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

Logo

Description	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

V20100C-E3 Datasheet (HTML) - Vishay Siliconix

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V20100C-E3 Product details

Ultra Low VF= 0.50 V at IF= 5 A

FEATURES

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

• Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package)

• Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC

Similar Part No. - V20100C-E3

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	V20100C-E3	214Kb / 6P	Dual High Voltage Trench MOS Barrier Schottky Rectifier 01-Jan-2022
	V20100C-E3-4W	161Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 24-Jun-09
	V20100C-E3/4W	167Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A Revision: 31-Jul-08
	V20100C-E3	214Kb / 6P	Dual High Voltage Trench MOS Barrier Schottky Rectifier 01-Jan-2022

Similar Description - V20100C-E3

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	VB20100C-M3	100Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A Revision: 03-Jan-17
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	VB60170G-E3	95Kb / 4P	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A Revision: 11-Sep-13
	V30120C-E3	157Kb / 6P	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A Revision: 12-Dec-16
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	V30120C	168Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A Revision: 19-May-08
	V20100SG	159Kb / 5P	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A Revision: 31-Jul-08
	V20120S	166Kb / 5P	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A Revision: 19-May-08
	V20100SG	160Kb / 5P	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A Revision: 19-Oct-07

About Vishay Siliconix

Vishay Siliconix is a subsidiary of Vishay Intertechnology, a global manufacturer of passive electronic components.
Vishay Siliconix specializes in the design, manufacturing, and marketing of power MOSFETs, IGBTs, and other power semiconductors.
The company was founded in 1962 and is headquartered in Santa Clara, California.
Vishay Siliconix provides power solutions for a variety of applications, including renewable energy systems, industrial equipment, computing and telecommunications, and automotive electronics.
The company's products are designed for high efficiency, low power consumption, and high reliability, and are manufactured in state-of-the-art facilities using advanced fabrication processes.
With a focus on innovation and customer satisfaction, Vishay Siliconix is committed to providing its customers with the best power management solutions to meet their needs.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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