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GT30J324 Datasheet (PDF) - Toshiba Semiconductor
GT30J324 Datasheet PDF - Toshiba Semiconductor
Part # GT30J324
Download  GT30J324 Download

File Size   166.33 Kbytes
Page   7 Pages
Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor
Description Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT30J324 Datasheet (PDF)

Go To PDF Page Download Datasheet
GT30J324 Datasheet PDF - Toshiba Semiconductor

Part # GT30J324
Download  GT30J324 Click to download

File Size   166.33 Kbytes
Page   7 Pages
Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor
Description Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT30J324 Datasheet (HTML) - Toshiba Semiconductor

GT30J324 Datasheet HTML 1Page - Toshiba Semiconductor GT30J324 Datasheet HTML 2Page - Toshiba Semiconductor GT30J324 Datasheet HTML 3Page - Toshiba Semiconductor GT30J324 Datasheet HTML 4Page - Toshiba Semiconductor GT30J324 Datasheet HTML 5Page - Toshiba Semiconductor GT30J324 Datasheet HTML 6Page - Toshiba Semiconductor GT30J324 Datasheet HTML 7Page - Toshiba Semiconductor

GT30J324 Product details

High Power Switching Applications
Fast Switching Applications

• Fourth-generation IGBT
• Enhancement mode type
• Fast switching (FS): Operating frequency up to 50 kHz (reference)
   High speed: tf = 0.05 μs (typ.)
   Low switching loss : Eon = 1.00 mJ (typ.)
                                  : Eoff = 0.80 mJ (typ.)
• Low saturation voltage: VCE (sat) = 2.0 V (typ.)
• FRD included between emitter and collector




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