PTFC210202FCV1R0XTMA1 Datasheet(PDF) - Infineon Technologies AG

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PTFC210202FCV1R0XTMA1 Datasheet (PDF) - Infineon Technologies AG

PTFC210202FCV1R0XTMA1 Datasheet PDF - Infineon Technologies AG


Part #	PTFC210202FCV1R0XTMA1

Download	PTFC210202FCV1R0XTMA1 Download

File Size	655.34 Kbytes

Page	9 Pages

Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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Description

Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz

PTFC210202FCV1R0XTMA1 Datasheet (PDF)

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PTFC210202FCV1R0XTMA1 Datasheet PDF - Infineon Technologies AG


Part #	PTFC210202FCV1R0XTMA1

Download	PTFC210202FCV1R0XTMA1 Click to download

File Size	655.34 Kbytes

Page	9 Pages

Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

Logo

Description	Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz

PTFC210202FCV1R0XTMA1 Datasheet (HTML) - Infineon Technologies AG

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Similar Part No. - PTFC210202FCV1R0XTMA1

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	PTFC210202FC	431Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET Rev. 03.2, 2014-05-14
Cree, Inc	PTFC210202FC	700Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 - 2200 MHz
WOLFSPEED, INC.	PTFC210202FC	828Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Rev. 06, 2023-06-28
	PTFC210202FC-V1	828Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Rev. 06, 2023-06-28
	PTFC210202FC-V1-R0	828Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Rev. 06, 2023-06-28

Similar Description - PTFC210202FCV1R0XTMA1

Manufacturer	Part #	Datasheet	Description
Cree, Inc	PTFC210202FC	700Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 - 2200 MHz
WOLFSPEED, INC.	PTFC210202FC-V1	828Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Rev. 06, 2023-06-28
Cree, Inc	PXAC201202FC	590Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 - 2200 MHz
Infineon Technologies A...	PXAC201202FC	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 ??2200 MHz Rev. 05.1, 2016-06-22
Cree, Inc	PXAC213308FV	518Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 ??2200 MHz
Infineon Technologies A...	PXAC213308FV	1Mb / 8P	Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 ??2200 MHz Rev. 02, 2016-05-04
Cree, Inc	PTFB091802FC	538Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 ??960 MHz
	PXAC203302FV	436Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 330 W, 28 V, 1880 - 2025 MHz
	PXAC261002FC	634Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 ??2690 MHz
	PTFB092707FH	556Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 270 W, 28 V, 925 ??960 MHz

About Infineon Technologies AG

Infineon Technologies is a leading global semiconductor manufacturer that specializes in providing power management, security, and control solutions for a variety of industries such as automotive, industrial, and communication systems.
The company was founded in 1999 and is headquartered in Neubiberg, Germany.
Infineon offers a wide range of products including microcontrollers, power semiconductors, sensors, and other integrated circuits.
The company has a strong presence in the global market, with operations and facilities in various countries across the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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