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K6X4008T1F Datasheet (PDF) - Samsung semiconductor

K6X4008T1F Datasheet PDF - Samsung semiconductor
Part # K6X4008T1F
Download  K6X4008T1F Download

File Size   174.44 Kbytes
Page   9 Pages
Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
Description 512Kx8 bit Low Power and Low Voltage CMOS Static RAM

K6X4008T1F Datasheet (PDF)

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K6X4008T1F Datasheet PDF - Samsung semiconductor

Part # K6X4008T1F
Download  K6X4008T1F Click to download

File Size   174.44 Kbytes
Page   9 Pages
Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
Description 512Kx8 bit Low Power and Low Voltage CMOS Static RAM

K6X4008T1F Datasheet (HTML) - Samsung semiconductor

K6X4008T1F Datasheet HTML 1Page - Samsung semiconductor K6X4008T1F Datasheet HTML 2Page - Samsung semiconductor K6X4008T1F Datasheet HTML 3Page - Samsung semiconductor K6X4008T1F Datasheet HTML 4Page - Samsung semiconductor K6X4008T1F Datasheet HTML 5Page - Samsung semiconductor K6X4008T1F Datasheet HTML 6Page - Samsung semiconductor K6X4008T1F Datasheet HTML 7Page - Samsung semiconductor K6X4008T1F Datasheet HTML 8Page - Samsung semiconductor K6X4008T1F Datasheet HTML 9Page - Samsung semiconductor

K6X4008T1F Product details

GENERAL DESCRIPTION
The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.

FEATURES
• Process Technology: Full CMOS
• Organization: 512K´8
• Power Supply Voltage: 2.7~3.6V
• Low Data Retention Voltage: 2V(Min)
• Three State Outputs
• Package Type: 32-SOP-525, 32-TSOP2-400F/R 32-TSOP1-0813.4F




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