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K4H561638D-TCB0 Datasheet (PDF) - Samsung semiconductor

K4H561638D-TCB0 Datasheet PDF - Samsung semiconductor
Part No. K4H561638D-TCB0
Download  K4H561638D-TCB0 Click to view

File Size   669.27 Kbytes
Page   53 Pages
Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
Description 128Mb DDR SDRAM

K4H561638D-TCB0 Datasheet (PDF)

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K4H561638D-TCB0 Datasheet PDF - Samsung semiconductor

Part No. K4H561638D-TCB0
Download  K4H561638D-TCB0 Click to view

File Size   669.27 Kbytes
Page   53 Pages
Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
Description 128Mb DDR SDRAM

K4H561638D-TCB0 Datasheet (HTML) - Samsung semiconductor

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K4H561638D-TCB0 Product details

Features
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Four banks operation
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• MRS cycle with address key programs
   -. Read latency 2, 2.5 (clock)
   -. Burst length (2, 4, 8)
   -. Burst type (sequential & interleave)
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
• Data I/O transactions on both edges of data strobe
• Edge aligned data output, center aligned data input
• LDM,UDM/DM for write masking only
• Auto & Self refresh
• 15.6us refresh interval(4K/64ms refresh)
• Maximum burst refresh cycle : 8
• 66pin TSOP II package



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