CMPA0060002F Datasheet(PDF) - Cree, Inc

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CMPA0060002F Datasheet (PDF) - Cree, Inc

CMPA0060002F Datasheet PDF - Cree, Inc


Part #	CMPA0060002F

Download	CMPA0060002F Download

File Size	961.69 Kbytes

Page	9 Pages

Manufacturer	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

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Description

2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier

CMPA0060002F Datasheet (PDF)

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CMPA0060002F Datasheet PDF - Cree, Inc


Part #	CMPA0060002F

Download	CMPA0060002F Click to download

File Size	961.69 Kbytes

Page	9 Pages

Manufacturer	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

Logo

Description	2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier

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Similar Part No. - CMPA0060002F

Manufacturer	Part #	Datasheet	Description
WOLFSPEED, INC.	CMPA0060002F	2Mb / 10P	2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Rev. 3.3, 2022-12-8
WOLFSPEED, INC.	CMPA0060002F1	1Mb / 10P	2 W, DC - 6.0 GHz, GaN MMIC Power Amplifier Rev. 1.0, 2022-8-26

Similar Description - CMPA0060002F

Manufacturer	Part #	Datasheet	Description
WOLFSPEED, INC.	CMPA0060002F	2Mb / 10P	2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Rev. 3.3, 2022-12-8
WOLFSPEED, INC.	CMPA0060025F	4Mb / 12P	25 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Rev. 4.3, 2022-12-13
Cree, Inc	CMPA0060025F	1Mb / 11P	25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier
Cree, Inc	CMPA0060002D	417Kb / 7P	2 Watt, 20 MHz - 6000 MHz GaN HEMT MMIC Power Amplifier
WOLFSPEED, INC.	CMPA2560025F	999Kb / 12P	25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Rev 3.1 April 2020
Cree, Inc	CMPA2560025F	955Kb / 11P	25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier
Cree, Inc	CMPA2560025F	630Kb / 10P	CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier
WOLFSPEED, INC.	CMPA0060025F1	2Mb / 11P	25 W, 20 MHz - 6.0 GHz, GaN MMIC, Power Amplifier Rev. 0.1, 2022-12-12
Cree, Inc	CMPA0060025D	614Kb / 7P	25 W, 20 MHz - 6.0 GHz, GaN MMIC, Power Amplifier
WOLFSPEED, INC.	CMPA0060025D	1Mb / 8P	25 W, 20 MHz - 6.0 GHz, GaN MMIC, Power Amplifier Rev. 2.3, 2022-12-13

About Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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