CGHV14250 Datasheet(PDF) - Cree, Inc

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CGHV14250 Datasheet (PDF) - Cree, Inc

CGHV14250 Datasheet PDF - Cree, Inc


Part #	CGHV14250

Download	CGHV14250 Download

File Size	1073.68 Kbytes

Page	11 Pages

Manufacturer	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

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Description

250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems

CGHV14250 Datasheet (PDF)

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CGHV14250 Datasheet PDF - Cree, Inc


Part #	CGHV14250

Download	CGHV14250 Click to download

File Size	1073.68 Kbytes

Page	11 Pages

Manufacturer	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

Logo

Description	250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems

CGHV14250 Datasheet (HTML) - Cree, Inc

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Similar Part No. - CGHV14250

Manufacturer	Part #	Datasheet	Description
WOLFSPEED, INC.	CGHV14250	1Mb / 12P	250 W, DC - 1.6 GHz, GaN HEMT for L-Band Radar Systems Rev. 3.0, 2022-9-30

Similar Description - CGHV14250

Manufacturer	Part #	Datasheet	Description
Cree, Inc	CGHV14500	1Mb / 11P	500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems
Cree, Inc	CGHV14800	765Kb / 9P	800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems
WOLFSPEED, INC.	CGHV14250	1Mb / 12P	250 W, DC - 1.6 GHz, GaN HEMT for L-Band Radar Systems Rev. 3.0, 2022-9-30
	CGHV14500	3Mb / 20P	500 W, DC - 1800 MHz, GaN HEMT for L-Band Radar Systems Rev. 5.0, 2022-7-27
	CGHV35150	1Mb / 10P	150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems Rev.1.4, 2022-12-2
Cree, Inc	CGHV35150	853Kb / 10P	150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems
WOLFSPEED, INC.	CGHV35120F	837Kb / 12P	120 W, 2.9 - 3.8 GHz, 50 V, GaN HEMT for S-Band Radar Systems Rev. 1.0, 2022-8-3
Cree, Inc	CGHV37400F	815Kb / 11P	400 W, 3500 - 3700 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems
Microsemi Corporation	1214-550P	84Kb / 2P	550 Watts - 300關s, 10%, 42V L-Band Pulsed Radar 1200 - 1400 MHz
Microsemi Corporation	1214-700P	83Kb / 2P	700 Watts - 300關s, 10%, 50V L-Band Pulsed Radar 1200 - 1400 MHz

About Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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