VF20100R_15 Datasheet(PDF) - Vishay Siliconix

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VF20100R Datasheet (PDF) - Vishay Siliconix

VF20100R Datasheet PDF - Vishay Siliconix


Part #	VF20100R_15

Download	VF20100R Download

File Size	83.25 Kbytes

Page	4 Pages

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

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Description

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

VF20100R Datasheet (PDF)

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VF20100R Datasheet PDF - Vishay Siliconix


Part #	VF20100R_15

Download	VF20100R Click to download

File Size	83.25 Kbytes

Page	4 Pages

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

Logo

Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

VF20100R Datasheet (HTML) - Vishay Siliconix

VF20100R Product details

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s,
per JESD 22-B106

Similar Part No. - VF20100R_15

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	VF20100R	80Kb / 4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 17-Aug-15

Similar Description - VF20100R_15

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	V20120C	167Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A Revision: 19-May-08
	VB20120C-M3	89Kb / 4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A Revision: 14-May-13
	V20100R	151Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A Revision: 19-May-08
	VB20120SG-M3	88Kb / 4P	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A Revision: 14-May-13
	V20120SG	166Kb / 5P	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A Revision: 19-May-08
	V40D120C-M3	109Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.45 V at IF = 5 A Revision: 06-Feb-15
	V60M120C-M3	129Kb / 4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A Revision: 10-May-16
	V40150C-E3	157Kb / 6P	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A Revision: 13-Dec-16
	V60100C-M3	136Kb / 4P	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A Revision: 11-May-16
	VT60L45PW	96Kb / 4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.24 V at IF = 5 A Revision: 08-Jan-14

About Vishay Siliconix

Vishay Siliconix is a subsidiary of Vishay Intertechnology, a global manufacturer of passive electronic components.
Vishay Siliconix specializes in the design, manufacturing, and marketing of power MOSFETs, IGBTs, and other power semiconductors.
The company was founded in 1962 and is headquartered in Santa Clara, California.
Vishay Siliconix provides power solutions for a variety of applications, including renewable energy systems, industrial equipment, computing and telecommunications, and automotive electronics.
The company's products are designed for high efficiency, low power consumption, and high reliability, and are manufactured in state-of-the-art facilities using advanced fabrication processes.
With a focus on innovation and customer satisfaction, Vishay Siliconix is committed to providing its customers with the best power management solutions to meet their needs.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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