V40150C Datasheet(PDF) - Vishay Siliconix

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V40150C Datasheet (PDF) - Vishay Siliconix

V40150C Datasheet PDF - Vishay Siliconix


Part #	V40150C

Download	V40150C Download

File Size	158.4 Kbytes

Page	5 Pages

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

Logo

Description

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A

V40150C Datasheet (PDF)

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V40150C Datasheet PDF - Vishay Siliconix


Part #	V40150C

Download	V40150C Click to download

File Size	158.4 Kbytes

Page	5 Pages

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

Logo

Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A

V40150C Datasheet (HTML) - Vishay Siliconix

V40150C Product details

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s,
per JESD 22-B106
• AEC-Q101 qualified

Similar Part No. - V40150C

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	V40150C	168Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A Revision: 19-May-08
	V40150C	162Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 24-Jun-09
	V40150C	130Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 23-Mar-11
	V40150C	163Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 24-Jun-09
	V40150C	163Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier5 Revision: 24-Jun-09

Similar Description - V40150C

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	V40150C	168Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A Revision: 19-May-08
	VB20M120C-E3	92Kb / 4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A Revision: 03-Jan-17
	V30M120M-E3	100Kb / 4P	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A Revision: 11-May-16
	V40150C-E3	157Kb / 6P	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A Revision: 13-Dec-16
	VF20M120C-M3	91Kb / 4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A Revision: 02-Dec-13
	V20M120C	141Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A Revision: 13-Dec-16
	V40M150C-M3	128Kb / 4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A Revision: 10-May-16
	V20150S	167Kb / 5P	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A Revision: 19-May-08
	VB20150S-M3	89Kb / 4P	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5.0 A Revision: 30-Jun-14
	VF20100R	83Kb / 4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A Revision: 17-Aug-15
	V40D120C-M3	109Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.45 V at IF = 5 A Revision: 06-Feb-15

About Vishay Siliconix

Vishay Siliconix is a subsidiary of Vishay Intertechnology, a global manufacturer of passive electronic components.
Vishay Siliconix specializes in the design, manufacturing, and marketing of power MOSFETs, IGBTs, and other power semiconductors.
The company was founded in 1962 and is headquartered in Santa Clara, California.
Vishay Siliconix provides power solutions for a variety of applications, including renewable energy systems, industrial equipment, computing and telecommunications, and automotive electronics.
The company's products are designed for high efficiency, low power consumption, and high reliability, and are manufactured in state-of-the-art facilities using advanced fabrication processes.
With a focus on innovation and customer satisfaction, Vishay Siliconix is committed to providing its customers with the best power management solutions to meet their needs.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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