V20200G_15 Datasheet(PDF) - Vishay Siliconix

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V20200G Datasheet (PDF) - Vishay Siliconix

V20200G Datasheet PDF - Vishay Siliconix


Part #	V20200G_15

Download	V20200G Download

File Size	157.64 Kbytes

Page	5 Pages

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

Logo

Description

Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.62 V at IF = 5 A

V20200G Datasheet (PDF)

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V20200G Datasheet PDF - Vishay Siliconix


Part #	V20200G_15

Download	V20200G Click to download

File Size	157.64 Kbytes

Page	5 Pages

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

Logo

Description	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.62 V at IF = 5 A

V20200G Datasheet (HTML) - Vishay Siliconix

V20200G Product details

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per JESD
22-B106 (for TO-220AB, ITO-220AB and TO-262AA
package)

Similar Part No. - V20200G_15

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	V20200G	148Kb / 5P	Dual High Voltage Trench MOS Barrier Schottky Rectifier Revision: 16-Aug-13

Similar Description - V20200G_15

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	V20200G-E3	156Kb / 6P	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.62 V at IF = 5 A Revision: 12-Dec-16
	VF20100R	83Kb / 4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A Revision: 17-Aug-15
	V40D120C-M3	109Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.45 V at IF = 5 A Revision: 06-Feb-15
	V60M120C-M3	129Kb / 4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A Revision: 10-May-16
	V40150C-E3	157Kb / 6P	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A Revision: 13-Dec-16
	V60100C-M3	136Kb / 4P	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A Revision: 11-May-16
	VT60L45PW	96Kb / 4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.24 V at IF = 5 A Revision: 08-Jan-14
	V30M120C	144Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A Revision: 17-Nov-16
	V20100C-E3	167Kb / 6P	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A Revision: 13-Dec-16
	V30200C	158Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.526 V at IF = 5 A Revision: 31-Jul-08
	V40100G	167Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A Revision: 19-May-08

About Vishay Siliconix

Vishay Siliconix is a subsidiary of Vishay Intertechnology, a global manufacturer of passive electronic components.
Vishay Siliconix specializes in the design, manufacturing, and marketing of power MOSFETs, IGBTs, and other power semiconductors.
The company was founded in 1962 and is headquartered in Santa Clara, California.
Vishay Siliconix provides power solutions for a variety of applications, including renewable energy systems, industrial equipment, computing and telecommunications, and automotive electronics.
The company's products are designed for high efficiency, low power consumption, and high reliability, and are manufactured in state-of-the-art facilities using advanced fabrication processes.
With a focus on innovation and customer satisfaction, Vishay Siliconix is committed to providing its customers with the best power management solutions to meet their needs.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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