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IRG4BC20UDS Datasheet (PDF) - International Rectifier
IRG4BC20UDS Datasheet PDF - International Rectifier
Part # IRG4BC20UDS
Download  IRG4BC20UDS Download
File Size   235.04 Kbytes
Page   11 Pages
Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)

IRG4BC20UDS Datasheet (PDF)

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IRG4BC20UDS Datasheet PDF - International Rectifier

Part # IRG4BC20UDS
Download  IRG4BC20UDS Click to download

File Size   235.04 Kbytes
Page   11 Pages
Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)

IRG4BC20UDS Datasheet (HTML) - International Rectifier


IRG4BC20UDS Product details

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE



Features

• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant
mode

• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

• IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations

• Industry standard D2Pak package

Benefits
• Generation 4 IGBTs offers highest efficiencies available
• Optimized for specific application conditions
• HEXFRED diodes optimized for performance with IGBTs . Minimized recovery characteristics require less/no snubbing
• Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs




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Similar Description - IRG4BC20UDS

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International Rectifier		 IRG4BC20UD IRF-IRG4BC20UD Datasheet
236Kb / 10P		 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)
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About International Rectifier

International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors.
The company was founded in 1947 and was headquartered in El Segundo, California.
IR provided a wide range of products including power management ICs, power MOSFETs, IGBTs, and other power control products.
The company's products were used in various applications such as computing, telecommunications, and industrial automation.
IR was known for its expertise in power management and control technology and its ability to deliver high-quality and reliable products to its customers.
In 2014, IR was acquired by Infineon Technologies, a leading provider of power management and control products and other semiconductor solutions.
The International Rectifier brand is no longer in use, but its technology and products continue to be a part of Infineon's portfolio.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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