NE55410GR Datasheet(PDF) - Renesas Technology Corp

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NE55410GR Datasheet (PDF) - Renesas Technology Corp

NE55410GR Datasheet PDF - Renesas Technology Corp


Part #	NE55410GR

Download	NE55410GR Download

File Size	317.31 Kbytes

Page	15 Pages

Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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Description

N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER

NE55410GR Datasheet (PDF)

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NE55410GR Datasheet PDF - Renesas Technology Corp


Part #	NE55410GR

Download	NE55410GR Click to download

File Size	317.31 Kbytes

Page	15 Pages

Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

Logo

Description	N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER

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Similar Part No. - NE55410GR

Manufacturer	Part #	Datasheet	Description
California Eastern Labs	NE55410GR	558Kb / 13P	N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
NEC	NE55410GR	186Kb / 13P	N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
California Eastern Labs	NE55410GR-T3-AZ	558Kb / 13P	N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
NEC	NE55410GR-T3-AZ	186Kb / 13P	N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
California Eastern Labs	NE55410GR	580Kb / 14P	N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER

Similar Description - NE55410GR

Manufacturer	Part #	Datasheet	Description
California Eastern Labs	NE55410GR	580Kb / 14P	N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
NEC	NE55410GR	186Kb / 13P	N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
California Eastern Labs	NE55410GR	558Kb / 13P	N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
Renesas Technology Corp	NES1823S-45	239Kb / 10P	GaAs FET 45 W L, S-BAND SINGLE-END POWER GaAs FET 2004
Renesas Technology Corp	NES1823S-90	242Kb / 10P	GaAs FET 90 W L, S-BAND SINGLE-END POWER GaAs FET 2004
NEC	NE6501077	37Kb / 6P	10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
Sanyo Semicon Device	LA4278	74Kb / 6P	10 W 2-Channel Power Amplifier
NEC	NE6500496	37Kb / 6P	4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
Renesas Technology Corp	NE5531079A	240Kb / 11P	7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
California Eastern Labs	NE5531079A	382Kb / 8P	7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS

About Renesas Technology Corp

Renesas Technology Corp is a Japanese semiconductor company that provides a wide range of microcontrollers, system-on-chips, and analog and power devices for various applications in the automotive, industrial, and consumer markets.
The company was formed in 2010 through the merger of NEC Electronics Corporation and Renesas Technology Corporation.
Renesas is one of the largest microcontroller suppliers in the world and is known for its expertise in the development of advanced technologies in areas such as the Internet of Things (IoT), artificial intelligence (AI), and automotive electronics.
The company has operations in over 20 countries and its products are used in a wide range of applications.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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