NX5313 Datasheet(PDF) - Renesas Technology Corp

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NX5313 Datasheet (PDF) - Renesas Technology Corp

NX5313 Datasheet PDF - Renesas Technology Corp


Part #	NX5313

Download	NX5313 Download

File Size	220.25 Kbytes

Page	9 Pages

Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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Description

1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE

NX5313 Datasheet (PDF)

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NX5313 Datasheet PDF - Renesas Technology Corp


Part #	NX5313

Download	NX5313 Click to download

File Size	220.25 Kbytes

Page	9 Pages

Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

Logo

Description	1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE

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NX5313 Product details

DESCRIPTION
The NX5313 Series is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1.25 Gb/s.

FEATURES
• Optical output power Po = 13.0 mW
• Low threshold current lth = 6 mA
• Differential Efficiency ηd = 0.5 W/A
• Wide operating temperature range TC = −40 to +85°C
• InGaAs monitor PIN-PD
• CAN package φ 5.6 mm
• Focal point 6.35 mm
• LD beam angle optimized for 8 degree angled SMF

APPLICATION
• FTTH PON (B-PON, G-PON, GE-PON 10 km) system

Similar Part No. - NX5313

Manufacturer	Part #	Datasheet	Description
California Eastern Labs	NX5313	162Kb / 4P	1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS
	NX5313EH	162Kb / 4P	1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS
	NX5313EK	162Kb / 4P	1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS

Similar Description - NX5313

Manufacturer	Part #	Datasheet	Description
California Eastern Labs	NX5323EH	173Kb / 7P	1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
	NX5317	338Kb / 9P	1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
	NX5315EH	283Kb / 7P	1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
NEC	NX5323EH	89Kb / 7P	1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
Renesas Technology Corp	NX6308GH	221Kb / 9P	1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
	PL10692EJ03V0DS	221Kb / 9P	1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
	NX6308GH	221Kb / 9P	1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
	NX6309GH	221Kb / 9P	1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
	NX6309GH	221Kb / 9P	1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
California Eastern Labs	NX5522	185Kb / 7P	1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE

About Renesas Technology Corp

Renesas Technology Corp is a Japanese semiconductor company that provides a wide range of microcontrollers, system-on-chips, and analog and power devices for various applications in the automotive, industrial, and consumer markets.
The company was formed in 2010 through the merger of NEC Electronics Corporation and Renesas Technology Corporation.
Renesas is one of the largest microcontroller suppliers in the world and is known for its expertise in the development of advanced technologies in areas such as the Internet of Things (IoT), artificial intelligence (AI), and automotive electronics.
The company has operations in over 20 countries and its products are used in a wide range of applications.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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