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HGTP12N60C3D Datasheet (PDF) - Intersil Corporation

HGTP12N60C3D Datasheet PDF - Intersil Corporation
Part # HGTP12N60C3D
Download  HGTP12N60C3D Download

File Size   99.41 Kbytes
Page   7 Pages
Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation
Description 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

HGTP12N60C3D Datasheet (PDF)

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HGTP12N60C3D Datasheet PDF - Intersil Corporation

Part # HGTP12N60C3D
Download  HGTP12N60C3D Click to download

File Size   99.41 Kbytes
Page   7 Pages
Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation
Description 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

HGTP12N60C3D Datasheet (HTML) - Intersil Corporation

HGTP12N60C3D Datasheet HTML 1Page - Intersil Corporation HGTP12N60C3D Datasheet HTML 2Page - Intersil Corporation HGTP12N60C3D Datasheet HTML 3Page - Intersil Corporation HGTP12N60C3D Datasheet HTML 4Page - Intersil Corporation HGTP12N60C3D Datasheet HTML 5Page - Intersil Corporation HGTP12N60C3D Datasheet HTML 6Page - Intersil Corporation HGTP12N60C3D Datasheet HTML 7Page - Intersil Corporation

HGTP12N60C3D Product details

This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in anti-parallel with the IGBT is the development type TA49188.
   
Features
• 24A, 600V at TC = 25°C
• Typical Fall Time at TJ = 150°C . . . . . . . . . . . . . . . . 210ns
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
   




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About Intersil Corporation


Intersil Corporation was an American semiconductor company that specialized in the design and manufacture of high-performance analog and mixed-signal integrated circuits.
The company was founded in 1967 and was known for its expertise in power management, data conversion, and radio frequency (RF) technologies.
Intersil's products were used in a wide range of applications such as consumer electronics, industrial, telecommunications, and aerospace and defense.
In 2016, Intersil was acquired by Renesas Electronics Corporation, a Japanese semiconductor company.
The Intersil brand and technology continue to be developed and sold as part of Renesas' portfolio of products.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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