HGTA32N60E2 Datasheet(PDF)

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HGTA32N60E2 Datasheet (PDF) - Intersil Corporation


Part #	HGTA32N60E2

Download	HGTA32N60E2 Download

File Size	31.92 Kbytes

Page	4 Pages

Manufacturer	INTERSIL [Intersil Corporation]

Direct Link	http://www.intersil.com/cda/home

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Description

32A, 600V N-Channel IGBT

HGTA32N60E2 Datasheet (PDF)

Download Datasheet


Part #	HGTA32N60E2

Download	HGTA32N60E2 Click to download

File Size	31.92 Kbytes

Page	4 Pages

Manufacturer	INTERSIL [Intersil Corporation]

Direct Link	http://www.intersil.com/cda/home

Logo

Description	32A, 600V N-Channel IGBT

HGTA32N60E2 Datasheet (HTML) - Intersil Corporation

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HGTA32N60E2 Product details

Description
The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25°C and +150°C.

Features
• 32A, 600V
• Latch Free Operation
• Typical Fall Time 620ns
• High Input Impedance
• Low Conduction Loss

Similar Part No. - HGTA32N60E2

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Fairchild Semiconductor	HGT1N30N60A4D	144Kb / 9P	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
	HGT1N40N60A4	152Kb / 10P	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
	HGT1N40N60A4D	152Kb / 10P	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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Intersil Corporation	HGT1S10N120BNS	81Kb / 7P	35A, 1200V, NPT Series N-Channel IGBT January 2000

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Similar Description - HGTA32N60E2

Manufacturer	Part #	Datasheet	Description
Intersil Corporation	HGTG32N60E2	33Kb / 4P	32A, 600V N-Channel IGBT April 1995
	HGTG24N60D1	32Kb / 4P	24A, 600V N-Channel IGBT May 1995
	HGTP12N60D1	31Kb / 4P	12A, 600V N-Channel IGBT April 1995
ON Semiconductor	NGTB03N60R2DT4G	598Kb / 8P	IGBT 600V, 4.5A, N-Channel September 2015 - Rev. 3
Unisonic Technologies	UGP7N60	170Kb / 3P	600V, SMPS N-CHANNEL IGBT
ON Semiconductor	NGTB05N60R2DT4G	527Kb / 7P	IGBT 600V, 8A, N-Channel January 2015 - Rev. 2
	NGTB10N60R2DT4G	531Kb / 7P	IGBT 600V, 10A, N-Channel January 2015 - Rev. 2
	NGTB15N60R2FG	737Kb / 7P	IGBT 600V, 14A, N-Channel December 2014 - Rev. 1
Fairchild Semiconductor	HGTD3N60A4S	189Kb / 8P	600V, SMPS Series N-Channel IGBT
Fairchild Semiconductor	HGTG40N60A4	181Kb / 8P	600V, SMPS Series N-Channel IGBT

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About Intersil Corporation

Intersil Corporation was an American semiconductor company that specialized in the design and manufacture of high-performance analog and mixed-signal integrated circuits.
The company was founded in 1967 and was known for its expertise in power management, data conversion, and radio frequency (RF) technologies.
Intersil's products were used in a wide range of applications such as consumer electronics, industrial, telecommunications, and aerospace and defense.
In 2016, Intersil was acquired by Renesas Electronics Corporation, a Japanese semiconductor company.
The Intersil brand and technology continue to be developed and sold as part of Renesas' portfolio of products.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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