Manufacturer | Part # | Datasheet | Description |
Hitachi Semiconductor |
PF08103A
|
42Kb / 8P |
MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone
|
Renesas Technology Corp |
PF08109B
|
249Kb / 25P |
MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone
|
PF08127
|
140Kb / 18P |
MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone
Oct. 2002 |
E2081606_PF08127B
|
183Kb / 16P |
MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone
|
PF08134
|
138Kb / 16P |
MOS FET Power Amplifier Module for GSM850 and DCS1800/1900 Triple Band Handy Phone
May 13, 2004 |
PF08134B
|
123Kb / 14P |
MOS FET Power Amplifier Module for GSM850 and DCS1800/1900 Triple Band Handy Phone
|
Hitachi Semiconductor |
PF01411A
|
25Kb / 4P |
MOS FET Power Amplifier Module for E-GSM Handy Phone
|
Skyworks Solutions Inc. |
RM009
|
296Kb / 17P |
Power Amplifier Module for Dual-band GSM900 DCS1800
|
Hitachi Semiconductor |
PF01411B
|
26Kb / 4P |
MOS FET Power Amplifier Module for E-GSM Handy Phone
|
PF01412A
|
25Kb / 4P |
MOS FET Power Amplifier Module for E-GSM Handy Phone
|