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HM621400HJP-12 Datasheet (PDF) - Hitachi Semiconductor

HM621400HJP-12 Datasheet PDF - Hitachi Semiconductor
Part No. HM621400HJP-12
Download  HM621400HJP-12 Click to view

File Size   73.69 Kbytes
Page   13 Pages
Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor
Description 4M High Speed SRAM (4-Mword x 1-bit)

HM621400HJP-12 Datasheet (PDF)

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HM621400HJP-12 Datasheet PDF - Hitachi Semiconductor

Part No. HM621400HJP-12
Download  HM621400HJP-12 Click to view

File Size   73.69 Kbytes
Page   13 Pages
Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor
Description 4M High Speed SRAM (4-Mword x 1-bit)

HM621400HJP-12 Datasheet (HTML) - Hitachi Semiconductor

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HM621400HJP-12 Product details

Description
The HM621400H is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology. It is most appropriate for the application which requires high speed and high density memory, such as cache and buffer memory in system. The HM621400H is packaged in 400-mil 32-pin SOJ for high density surface mounting.

Features
• Single 5.0 V supply : 5.0 V ± 10 %
• Access time 10/12/15 ns (max)
• Completely static memory
    - No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible
    - All inputs and outputs
• Operating current: 200/180/160 mA (max)
• TTL standby current: 70/60/50 mA (max)
• CMOS standby current: 5 mA (max) : 1.2 mA (max) (L-version)
• Data retension current: 0.8 mA (max) (L-version)
• Data retension voltage: 2 V (min) (L-version)
• Center VCC and VSS type pinout



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