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MTP50N06V Datasheet (PDF) - New Jersey Semi-Conductor Products, Inc.

MTP50N06V Datasheet PDF - New Jersey Semi-Conductor Products, Inc.
Part No. MTP50N06V
Download  MTP50N06V Click to view

File Size   112.94 Kbytes
Page   2 Pages
Manufacturer  NJSEMI [New Jersey Semi-Conductor Products, Inc.]
Direct Link  http://www.njsemi.com
Logo NJSEMI - New Jersey Semi-Conductor Products, Inc.
Description TMOS V??Power Field Effect Transistor

MTP50N06V Datasheet (PDF)

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MTP50N06V Datasheet PDF - New Jersey Semi-Conductor Products, Inc.

Part No. MTP50N06V
Download  MTP50N06V Click to view

File Size   112.94 Kbytes
Page   2 Pages
Manufacturer  NJSEMI [New Jersey Semi-Conductor Products, Inc.]
Direct Link  http://www.njsemi.com
Logo NJSEMI - New Jersey Semi-Conductor Products, Inc.
Description TMOS V??Power Field Effect Transistor

MTP50N06V Datasheet (HTML) - New Jersey Semi-Conductor Products, Inc.

MTP50N06V Datasheet HTML 1Page - New Jersey Semi-Conductor Products, Inc. MTP50N06V Datasheet HTML 2Page - New Jersey Semi-Conductor Products, Inc.

MTP50N06V Product details

TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM



N–Channel Enhancement–Mode Silicon Gate



TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

New Features of TMOS V

• On–resistance Area Product about One–half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology

• Faster Switching than E–FET Predecessors

Features Common to TMOS V and TMOS E–FETS

• Avalanche Energy Specified

• IDSS and VDS(on) Specified at Elevated Temperature

• Static Parameters are the Same for both TMOS V and TMOS E–FET


 



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