DESCRIPTION AND APPLICATIONS

The LP1500 is an Aluminum Gallium  Arsenide / Indium Gallium  Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25  mm by 1500  mm  Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The  epitaxial structure and processing have been optimized for reliable high-power applications.

FEATURES

¨  31.5 dBm Output Power at 1-dB Compression at 18 GHz

¨  8 dB Power Gain at 18 GHz

¨  28 dBm Output Power at 1-dB Compression at 3.3V

¨  45dBm Output IP3 at 18GHz

¨  50% Power-Added Efficiency