Manufacturer | Part # | Datasheet | Description |
Renesas Technology Corp |
NE5531079A
|
240Kb / 11P |
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
|
California Eastern Labs |
NE552R479A-T1-A
|
605Kb / 7P |
3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS
|
NE5511279A
|
296Kb / 4P |
7.5 V UHF BAND RF POWER SILICON LD-MOS FET
|
NEC |
NE552R679A
|
68Kb / 9P |
3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS
|
California Eastern Labs |
NE5511279A-A
|
297Kb / 4P |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
|
NEC |
NE5511279A-T1
|
99Kb / 3P |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
|
5510279A
|
390Kb / 4P |
3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS
|
California Eastern Labs |
NE5510279A
|
42Kb / 5P |
3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS
|
NE5510179A
|
42Kb / 4P |
3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS
|
NEC |
NE5510279A
|
39Kb / 5P |
3.5V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS
|