Manufacturer | Part # | Datasheet | Description |
Omron Electronics LLC |
EE-1006-A
|
1Mb / 13P |
Photomicrosensor with 50- to 100-mA direct switching capacity for built-in application.
|
EESX670
|
1Mb / 13P |
Photomicrosensor with 50- to 100-mA direct switching capacity for built-in application.
|
Microchip Technology |
TC2185-50VCTTR
|
827Kb / 20P |
50 mA, 100 mA, 150 mA CMOS LDOs with
02/16/06 |
TC2015-50VCTTR
|
827Kb / 20P |
50 mA, 100 mA, 150 mA CMOS LDOs with
02/16/06 |
Omron Electronics LLC |
EE-SX3157-P1
|
261Kb / 2P |
Through-beam Photomicrosensors with 5-mm slot.
|
Microchip Technology |
TC2185-3.0VCTTR
|
371Kb / 20P |
50 mA, 100 mA, 150 mA CMOS LDOs
11/29/12 |
CIT Relay & Switch |
WJ152
|
236Kb / 3P |
Switching capacity up to 10A
|
DB Lectro Inc |
NSAM
|
225Kb / 2P |
Switching capacity up to 20A
|
NVFM
|
181Kb / 2P |
Switching capacity up to 25A
|
NVF
|
180Kb / 2P |
Switching capacity up to 20A
|