General Description

The H11GXM series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an inte

gral base-emitter resistor to optimize elevated tempera ture characteristics.

Features

■ High BVCEO

– Minimum 100V for H11G1M

– Minimum 80V for H11G2M

– Minimum 55V for H11G3M

■ High sensitivity to low input current (Min. 500% CTR at IF = 1mA)

■ Low leakage current at elevated temperature (Max. 100µA at 80°C)

■ Underwriters Laboratory (UL) recognized File # E90700, Volume 2

Applications

■ CMOS logic interface

■ Telephone ring detector

■ Low input TTL interface

■ Power supply isolation

■ Replace pulse transformer