General Description
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
   
Features
• 38 A, 60 V. RDS(on) = 0.021 Ω @ VGS = 10 V
                     RDS(on) = 0.025 Ω @ VGS = 6 V.
• Low gate charge (33nC typical).
• Fast switching speed.
• High performance trench technology for extremely
    low RDS(on).
   
Applications
• DC/DC converter
• Motor drives