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W972GG6JB-25 Datasheet (PDF) - Winbond

W972GG6JB-25 Datasheet PDF - Winbond
Part No. W972GG6JB-25
Download  W972GG6JB-25 Click to view

File Size   1491.66 Kbytes
Page   87 Pages
Manufacturer  WINBOND [Winbond]
Direct Link  http://www.winbond.com
Logo WINBOND - Winbond
Description Double Data Rate architecture: two data transfers per clock cycle

W972GG6JB-25 Datasheet (PDF)

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W972GG6JB-25 Datasheet PDF - Winbond

Part No. W972GG6JB-25
Download  W972GG6JB-25 Click to view

File Size   1491.66 Kbytes
Page   87 Pages
Manufacturer  WINBOND [Winbond]
Direct Link  http://www.winbond.com
Logo WINBOND - Winbond
Description Double Data Rate architecture: two data transfers per clock cycle

W972GG6JB-25 Datasheet (HTML) - Winbond

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W972GG6JB-25 Product details

GENERAL DESCRIPTION
The W972GG6JB is a 2G bits DDR2 SDRAM, organized as 16,777,216 words x 8 banks x 16 bits. This device achieves high speed transfer rates up to 1066Mb/sec/pin (DDR2-1066) for various applications. W972GG6JB is sorted into the following grade parts: -18, -25, 25I, 25A, 25K, -3 and -3A. The -18 is compliant to the DDR2-1066 (7-7-7) a-49740-pass. The -25/25I/25A/25K are compliant to the DDR2-800 (5-5-5) or DDR2-800 (6-6-6) specification (the 25I industrial grade parts is guaranteed to support -40°C ≤ TCASE ≤ 95°C). The -3/-3A are compliant to the DDR2-667 (5-5-5) specification.

FEATURES
• Power Supply: VDD, VDDQ = 1.8 V ± 0.1V
• Double Data Rate architecture: two data transfers per clock cycle
• CAS Latency: 3, 4, 5, 6 and 7
• Burst Length: 4 and 8
• Bi-directional, differential data strobes (DQS and DQS ) are transmitted / received with data
• Edge-aligned with Read data and center-aligned with Write data
• DLL aligns DQ and DQS transitions with clock
• Differential clock inputs (CLK and CLK )
• Data masks (DM) for write data
• Commands entered on each positive CLK edge, data and data mask are referenced to both edges of DQS
• Posted CAS programmable additive latency supported to make command and data bus efficiency
• Read Latency = Additive Latency plus CAS Latency (RL = AL + CL)
• Off-Chip-Driver impedance adjustment (OCD) and On-Die-Termination (ODT) for better signal quality
• Auto-precharge operation for read and write bursts
• Auto Refresh and Self Refresh modes
• Precharged Power Down and Active Power Down
• Write Data Mask
• Write Latency = Read Latency - 1 (WL = RL - 1)
• Interface: SSTL_18
• Packaged in WBGA 84 Ball (11X13 mm2), using Lead free materials with RoHS compliant



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