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K8A1215ETC Datasheet (PDF) - Samsung semiconductor

K8A1215ETC Datasheet PDF - Samsung semiconductor
Part No. K8A1215ETC
Download  K8A1215ETC Click to view

File Size   1508.9 Kbytes
Page   84 Pages
Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
Description 512Mb C-die NOR FLASH

K8A1215ETC Datasheet (PDF)

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K8A1215ETC Datasheet PDF - Samsung semiconductor

Part No. K8A1215ETC
Download  K8A1215ETC Click to view

File Size   1508.9 Kbytes
Page   84 Pages
Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
Description 512Mb C-die NOR FLASH

K8A1215ETC Datasheet (HTML) - Samsung semiconductor

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K8A1215ETC Product details

GENERAL DESCRIPTION
The K8A(10/11/12/13)15E featuring single 1.8V power supply is a 512Mbit Muxed Burst Multi Bank Flash Memory organized as 32Mx16. The memory architecture of the device is designed to divide its memory arrays into 512blocks(Uniform block part)/515blocks(Boot block part) with independent hardware protection. This block architecture provides highly flexible erase and program capability. The K8A(10/11/12/13)15E NOR Flash consists of sixteen banks. This device is capable of reading data from one bank while programming or erasing in the other bank. Regarding read access time, the K8A10/1215E provides an 11ns burst access time and an 95ns initial access time at 66MHz.

FEATURES
• Single Voltage, 1.7V to 1.95V for Read and Write operations
• Organization
   - 33,554,432 x 16 bit (Word Mode Only)
• Read While Program/Erase Operation
• Multiple Bank Architecture
   - 16 Banks (32Mb Partition)
• OTP Block : Extra 512-Word block
• Read Access Time (@ CL=30pF)
   - Asynchronous Random Access Time : 100ns
   - Synchronous Random Access Time :95ns
   - Burst Access Time :
      11ns(66Mhz) / 9ns(83Mhz) / 7ns (108MHz) / 6ns (133MHz)
• Page Mode Operation
   16Words Page access allows fast asynchronous read Page Read Access Time :
   18ns(66/83Mhz) / 15ns(108/133Mhz)
• Burst Length :
   - Continuous Linear Burst
   - Linear Burst : 8-word & 16-word with Wrap
• Block Architecture
   - Uniform block part (K8A(10/11/12/13)15EZC) :
      Five hundred twelve 64Kword blocks
   - Boot block part (K8A(10/11/12/13)15ET(B)C) :
      Four 16Kword blocks and five hundred eleven 64Kword blocks (Bank 0 contains four 16 Kword blocks and thirty-one 64Kword blocks, Bank 1 ~ Bank 15 contain four hundred eighty 64Kword blocks)
• Reduce program time using the VPP
• Support 512-word Buffer Program
• Power Consumption (Typical value, CL=30pF)
   - Synchronous Read Current : 35mA
   - Program/Erase Current : 25mA
   - Read While Program/Erase Current : 45mA
   - Standby Mode/Auto Sleep Mode : 30uA
• Block Protection/Unprotection
   - Using the software command sequence
   - Last two boot blocks are protected by WP=VIL
      (Boot block part : K8A(10/11/12/13)15ET(B)C)
   - Last one block (BA511) is protected by WP=VIL
      (Uniform block part : K8A(10/11/12/13)15EZC)
   - All blocks are protected by VPP=VIL
• Handshaking Feature
   - Provides host system with minimum latency by monitoring RDY
• Erase Suspend/Resume
• Program Suspend/Resume
• Unlock Bypass Program/Erase
• Hardware Reset (RESET)
• Deep Power Down Mode
• Data Polling and Toggle Bits
   - Provides a software method of detecting the status of program or erase completion
• Endurance
   - 100K Program/Erase Cycles Minimum
• Extended Temperature : -25°C ~ 85°C
• Support Common Flash Memory Interface
• Output Driver Control by Configuration Register
• Low Vcc Write Inhibit
• Package : TBD



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