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K4B4G0846B-MCF7 Datasheet (PDF) - Samsung semiconductor

K4B4G0846B-MCF7 Datasheet PDF - Samsung semiconductor
Part # K4B4G0846B-MCF7
Download  K4B4G0846B-MCF7 Download

File Size   1085.4 Kbytes
Page   59 Pages
Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
Description DDP 4Gb B-die DDR3 SDRAM Specification

K4B4G0846B-MCF7 Datasheet (PDF)

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K4B4G0846B-MCF7 Datasheet PDF - Samsung semiconductor

Part # K4B4G0846B-MCF7
Download  K4B4G0846B-MCF7 Click to download

File Size   1085.4 Kbytes
Page   59 Pages
Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
Description DDP 4Gb B-die DDR3 SDRAM Specification

K4B4G0846B-MCF7 Datasheet (HTML) - Samsung semiconductor

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K4B4G0846B-MCF7 Product details

Key Features
• JEDEC standard 1.5V ± 0.075V Power Supply
• VDDQ = 1.5V ± 0.075V
• 400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin,
   667MHz fCK for 1333Mb/sec/pin
• 8 Banks
• Posted CAS
• Programmable CAS Latency(posted CAS): 6, 7, 8, 9, 10
• Programmable Additive Latency: 0, CL-2 or CL-1 clock
• Programmable CAS Write Latency (CWL) = 5 (DDR3-800), 6
   (DDR3-1066) and 7 (DDR3-1333)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with starting
   address “000” only), 4 with tCCD = 4 which does not allow seamless
   read or write [either On the fly using A12 or MRS]
• Bi-directional Differential Data-Strobe
• Internal(self) calibration : Internal self calibration through ZQ pin
   (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at
   85°C < TCASE < 95 °C
• Asynchronous Reset
• Package : 78 balls FBGA - x4/x8
• All of Lead-Free products are compliant for RoHS
• All of products are Halogen-free




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