Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

MRFG35003N6AT1 Datasheet (PDF) - Freescale Semiconductor, Inc

MRFG35003N6AT1 Datasheet PDF - Freescale Semiconductor, Inc
Part # MRFG35003N6AT1
Download  MRFG35003N6AT1 Download

File Size   221.41 Kbytes
Page   11 Pages
Manufacturer  FREESCALE [Freescale Semiconductor, Inc]
Direct Link  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc
Description Gallium Arsenide PHEMT RF Power Field Effect Transistor

MRFG35003N6AT1 Datasheet (PDF)

Go To PDF Page Download Datasheet
MRFG35003N6AT1 Datasheet PDF - Freescale Semiconductor, Inc

Part # MRFG35003N6AT1
Download  MRFG35003N6AT1 Click to download

File Size   221.41 Kbytes
Page   11 Pages
Manufacturer  FREESCALE [Freescale Semiconductor, Inc]
Direct Link  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc
Description Gallium Arsenide PHEMT RF Power Field Effect Transistor

MRFG35003N6AT1 Datasheet (HTML) - Freescale Semiconductor, Inc

Back Button MRFG35003N6AT1 Datasheet HTML 1Page - Freescale Semiconductor, Inc MRFG35003N6AT1 Datasheet HTML 2Page - Freescale Semiconductor, Inc MRFG35003N6AT1 Datasheet HTML 3Page - Freescale Semiconductor, Inc MRFG35003N6AT1 Datasheet HTML 4Page - Freescale Semiconductor, Inc MRFG35003N6AT1 Datasheet HTML 5Page - Freescale Semiconductor, Inc MRFG35003N6AT1 Datasheet HTML 6Page - Freescale Semiconductor, Inc MRFG35003N6AT1 Datasheet HTML 7Page - Freescale Semiconductor, Inc MRFG35003N6AT1 Datasheet HTML 8Page - Freescale Semiconductor, Inc MRFG35003N6AT1 Datasheet HTML 9Page - Freescale Semiconductor, Inc MRFG35003N6AT1 Datasheet HTML 10Page - Freescale Semiconductor, Inc Next Button 

MRFG35003N6AT1 Product details

3.5 GHz, 3 W, 6 V POWER FET GaAs PHEMT

Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications.

• Typical Single-Carrier W-CDMA Performance: VDD = 6 Volts, IDQ = 180 mA, Pout = 450 mWatts Avg., 3550 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
   Power Gain — 10 dB
   Drain Efficiency — 27%
   ACPR @ 5 MHz Offset — -42.5 dBc in 3.84 MHz Channel Bandwidth
• 3 Watts P1dB @ 3550 MHz, CW

Features
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.




Similar Part No. - MRFG35003N6AT1

ManufacturerPart #DatasheetDescription
logo
NXP Semiconductors
MRFG35003N6AT1 NXP-MRFG35003N6AT1 Datasheet
260Kb / 11P
   Gallium Arsenide PHEMT
Rev. 2, 6/2009
More results


Similar Description - MRFG35003N6AT1

ManufacturerPart #DatasheetDescription
logo
Freescale Semiconductor...
MRFG35010MT1 FREESCALE-MRFG35010MT1 Datasheet
516Kb / 12P
   Gallium Arsenide PHEMT RF Power Field Effect Transistor
logo
NXP Semiconductors
MRFG35010A NXP-MRFG35010A Datasheet
490Kb / 18P
   Gallium Arsenide PHEMT RF Power Field Effect Transistor
Rev. 2, 12/2008
logo
Freescale Semiconductor...
MRFG35005ANT1 FREESCALE-MRFG35005ANT1 Datasheet
452Kb / 13P
   Gallium Arsenide PHEMT RF Power Field Effect Transistor
logo
NXP Semiconductors
MRFG35010AN NXP-MRFG35010AN Datasheet
1Mb / 25P
   Gallium Arsenide pHEMT RF Power Field Effect Transistor
Rev. 4, 8/2013
logo
Freescale Semiconductor...
MRFG35003M6T1 FREESCALE-MRFG35003M6T1_06 Datasheet
132Kb / 12P
   Gallium Arsenide PHEMT RF Power Field Effect Transistor
MRFG35003ANT1 FREESCALE-MRFG35003ANT1 Datasheet
473Kb / 18P
   Gallium Arsenide PHEMT RF Power Field Effect Transistor
MRFG35005MT1 FREESCALE-MRFG35005MT1_06 Datasheet
132Kb / 12P
   Gallium Arsenide PHEMT RF Power Field Effect Transistor
MRFG35002N6AT1 FREESCALE-MRFG35002N6AT1 Datasheet
187Kb / 11P
   Gallium Arsenide PHEMT RF Power Field Effect Transistor
MRFG35010NT1 FREESCALE-MRFG35010NT1 Datasheet
173Kb / 10P
   Gallium Arsenide PHEMT RF Power Field Effect Transistor
MRFG35010R1 FREESCALE-MRFG35010R1 Datasheet
373Kb / 11P
   Gallium Arsenide PHEMT RF Power Field Effect Transistor
More results




About Freescale Semiconductor, Inc


Freescale Semiconductor was an American semiconductor company that was founded in 1948.
The company was a leading provider of microcontrollers, sensors, and other semiconductor products for various applications in the automotive, industrial, and consumer markets.
Freescale's products were known for their high performance, low power consumption, and small form factor.
The company was acquired by NXP Semiconductors in 2015, and its products and technologies continue to be developed and sold under the NXP brand.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




Link URL



Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com