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IS42S81600D-7T Datasheet (PDF) - Integrated Silicon Solution, Inc

IS42S81600D-7T Datasheet PDF - Integrated Silicon Solution, Inc
Part # IS42S81600D-7T
Download  IS42S81600D-7T Download

File Size   567.0 Kbytes
Page   62 Pages
Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc
Description 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

IS42S81600D-7T Datasheet (PDF)

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IS42S81600D-7T Datasheet PDF - Integrated Silicon Solution, Inc

Part # IS42S81600D-7T
Download  IS42S81600D-7T Click to download

File Size   567.0 Kbytes
Page   62 Pages
Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc
Description 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

IS42S81600D-7T Datasheet (HTML) - Integrated Silicon Solution, Inc

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IS42S81600D-7T Product details

OVERVIEW
ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows.

FEATURES
• Clock frequency: 166, 143, 133 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Power supply
                               VDD       VDDQ
    IS42S81600D     3.3V       3.3V
    IS42S16800D     3.3V       3.3V
• LVTTL interface
• Programmable burst length
    – (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave
• Auto Refresh (CBR)
• Self Refresh with programmable refresh periods
• 4096 refresh cycles every 64 ms
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write operations capability
• Burst termination by burst stop and precharge command
• Industrial Temperature Availability
• Lead-free Availability




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About Integrated Silicon Solution, Inc


Integrated Silicon Solution, Inc. (ISSI) is a fabless semiconductor company that designs and markets high-performance integrated circuits (ICs) for the automotive, industrial, medical, and communications markets. The company was founded in 1988 and is headquartered in Milpitas, California, USA.

ISSI's product portfolio includes static random access memory (SRAM), dynamic random access memory (DRAM), and analog and mixed-signal ICs. The company specializes in low-power, high-speed SRAMs, and is a leading supplier of DRAMs to the automotive market.

In 2015, ISSI was acquired by China's Uphill Investment Co., Ltd. and became a wholly-owned subsidiary of Uphill Investment.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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