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GT60M303 Datasheet (PDF) - Toshiba Semiconductor

GT60M303 Datasheet PDF - Toshiba Semiconductor
Part # GT60M303
Download  GT60M303 Download

File Size   426.72 Kbytes
Page   6 Pages
Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor
Description INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT

GT60M303 Datasheet (PDF)

Go To PDF Page Download Datasheet
GT60M303 Datasheet PDF - Toshiba Semiconductor

Part # GT60M303
Download  GT60M303 Click to download

File Size   426.72 Kbytes
Page   6 Pages
Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor
Description INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT

GT60M303 Datasheet (HTML) - Toshiba Semiconductor

GT60M303 Datasheet HTML 1Page - Toshiba Semiconductor GT60M303 Datasheet HTML 2Page - Toshiba Semiconductor GT60M303 Datasheet HTML 3Page - Toshiba Semiconductor GT60M303 Datasheet HTML 4Page - Toshiba Semiconductor GT60M303 Datasheet HTML 5Page - Toshiba Semiconductor GT60M303 Datasheet HTML 6Page - Toshiba Semiconductor

GT60M303 Product details

HIGH POWER SWITCHING APPLICATIONS

● Fourth generation IGBT
● FRD included between emitter and collector
● Enhancement mode type
● High speed 
   IGBT : tf = 0.25μs (TYP.)
   FRD : trr = 0.7μs (TYP.)
● Low saturation voltage : VCE (sat) = 2.1V (TYP.)




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