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2SK1365 Datasheet (PDF) - Toshiba Semiconductor
2SK1365 Datasheet PDF - Toshiba Semiconductor
Part # 2SK1365
Download  2SK1365 Download

File Size   443.37 Kbytes
Page   6 Pages
Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor
Description FET, Silicon N Channel MOS Type(for High Speed, High Current Switching, Switching Power Supply)

2SK1365 Datasheet (PDF)

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2SK1365 Datasheet PDF - Toshiba Semiconductor

Part # 2SK1365
Download  2SK1365 Click to download

File Size   443.37 Kbytes
Page   6 Pages
Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor
Description FET, Silicon N Channel MOS Type(for High Speed, High Current Switching, Switching Power Supply)

2SK1365 Datasheet (HTML) - Toshiba Semiconductor

2SK1365 Datasheet HTML 1Page - Toshiba Semiconductor 2SK1365 Datasheet HTML 2Page - Toshiba Semiconductor 2SK1365 Datasheet HTML 3Page - Toshiba Semiconductor 2SK1365 Datasheet HTML 4Page - Toshiba Semiconductor 2SK1365 Datasheet HTML 5Page - Toshiba Semiconductor 2SK1365 Datasheet HTML 6Page - Toshiba Semiconductor

2SK1365 Product details

Switching Power Supply Applications

● Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.)
● High forward transfer admittance : |Yfs| = 4.0 S (typ.)
● Low leakage current : IDSS = 300 μA (max) (VDS = 800 V)
● Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)




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