CQY36N Datasheet(PDF) - Vishay Siliconix

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CQY36N Datasheet (PDF) - Vishay Siliconix

CQY36N Datasheet PDF - Vishay Siliconix


Part #	CQY36N

Download	CQY36N Download

File Size	120.82 Kbytes

Page	6 Pages

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

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Description

GaAs Infrared Emitting Diode in Miniature (T-3/4) Package

CQY36N Datasheet (PDF)

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CQY36N Datasheet PDF - Vishay Siliconix


Part #	CQY36N

Download	CQY36N Click to download

File Size	120.82 Kbytes

Page	6 Pages

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

Logo

Description	GaAs Infrared Emitting Diode in Miniature (T-3/4) Package

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CQY36N Product details

DESCRIPTION
CQY36N is an infrared, 950 nm emitting diode in GaAs technology molded in a miniature, clear plastic package without lens.

FEATURES
• Package type: leaded
• Package form: T-¾
• Dimensions (in mm): Ø 1.8
• Peak wavelength: λp = 950 nm
• High reliability
• Angle of half intensity: φ = ± 55°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Package matches with detector BPW16N
• Compliant to RoHS Directive 2002/95/EC and in accordance with WEEE 2002/96/EC

APPLICATIONS
• Radiation source in near infrared range

Similar Part No. - CQY36N

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	CQY36N	99Kb / 5P	Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs Rev. 1.7, 04-Sep-08
	CQY36N	95Kb / 5P	Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs Rev. 1.8, 16-May-11
	CQY36N	98Kb / 5P	Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs 01-Jan-2022
	CQY36N	97Kb / 5P	Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs 01-Jan-2023
	CQY36N	99Kb / 5P	Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs Rev. 1.7, 04-Sep-08

Similar Description - CQY36N

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	CQY37N	76Kb / 5P	GaAs Infrared Emitting Diode in Miniature (T-3/4)Package Rev. 2, 20-May-99
Unity Opto Technology	MIE-516A2U	29Kb / 2P	AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
	MIE-516A4U	30Kb / 2P	AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
	MIE-526A2U	30Kb / 2P	AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
	MIE-526A4U	30Kb / 2P	AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
	MIE-536A2U	30Kb / 2P	AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
	MIE-546A2U	30Kb / 2P	AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
	MIE-556A4U	30Kb / 2P	AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
	MIE-824A4	31Kb / 2P	AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
Vishay Siliconix	CQY37N	106Kb / 6P	GaAs Infrared Emitting Diode in Miniature (T-4/3) Package Rev. 1.5, 30-Mar-06

About Vishay Siliconix

Vishay Siliconix is a subsidiary of Vishay Intertechnology, a global manufacturer of passive electronic components.
Vishay Siliconix specializes in the design, manufacturing, and marketing of power MOSFETs, IGBTs, and other power semiconductors.
The company was founded in 1962 and is headquartered in Santa Clara, California.
Vishay Siliconix provides power solutions for a variety of applications, including renewable energy systems, industrial equipment, computing and telecommunications, and automotive electronics.
The company's products are designed for high efficiency, low power consumption, and high reliability, and are manufactured in state-of-the-art facilities using advanced fabrication processes.
With a focus on innovation and customer satisfaction, Vishay Siliconix is committed to providing its customers with the best power management solutions to meet their needs.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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