BF996SB Datasheet(PDF) - Vishay Siliconix

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BF996SB Datasheet (PDF) - Vishay Siliconix

BF996SB Datasheet PDF - Vishay Siliconix


Part #	BF996SB

Download	BF996SB Download

File Size	133.7 Kbytes

Page	8 Pages

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

Logo

Description

N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

BF996SB Datasheet (PDF)

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BF996SB Datasheet PDF - Vishay Siliconix


Part #	BF996SB

Download	BF996SB Click to download

File Size	133.7 Kbytes

Page	8 Pages

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

Logo

Description	N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

BF996SB Datasheet (HTML) - Vishay Siliconix

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BF996SB Datasheet HTML 8Page - Vishay Siliconix

BF996SB Product details

DESCRIPTION
Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate.

FEATURES
• Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.

APPLICATIONS
• RF applications such as:
– UHF television tuners
– Professional communication equipment.

Similar Part No. - BF996SB

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	BF996S	35Kb / 5P	N-channel dual-gate MOS-FET April 1991
Siemens Semiconductor G...	BF996S	135Kb / 8P	Silicon N Channel MOSFET Tetrode (For input stages in UHF TV tuners High transconductance Low noise figure)
TEMIC Semiconductors	BF996S	68Kb / 5P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
NXP Semiconductors	BF996S	9Mb / 130P	RF Manual 16th edition June 2012
Quanzhou Jinmei Electro...	BF996S	37Kb / 5P	N-channel dual-gate MOS-FET

Similar Description - BF996SB

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	BF994S	119Kb / 7P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 3, 20-Jan-99
	BF966SA	161Kb / 8P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 1.5, 15-Apr-05
	BF995	116Kb / 7P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 3, 20-Jan-99
	BF961	160Kb / 7P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 1.5, 25-Nov-04
Vishay Telefunken	BF966	396Kb / 10P	N-Channel Dual Gate MOS-Fieldeffect Tetrode - Depletion Mode
Vishay Siliconix	BF964S	127Kb / 8P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 3, 20-Jan-99
	BF988	139Kb / 8P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 4, 08-Jul-99
	BF998	155Kb / 9P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 4, 23-Jun-99
	BF966S	127Kb / 8P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 3, 20-Jan-99
	BF998	318Kb / 10P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 1.8, 05-Sep-08

About Vishay Siliconix

Vishay Siliconix is a subsidiary of Vishay Intertechnology, a global manufacturer of passive electronic components.
Vishay Siliconix specializes in the design, manufacturing, and marketing of power MOSFETs, IGBTs, and other power semiconductors.
The company was founded in 1962 and is headquartered in Santa Clara, California.
Vishay Siliconix provides power solutions for a variety of applications, including renewable energy systems, industrial equipment, computing and telecommunications, and automotive electronics.
The company's products are designed for high efficiency, low power consumption, and high reliability, and are manufactured in state-of-the-art facilities using advanced fabrication processes.
With a focus on innovation and customer satisfaction, Vishay Siliconix is committed to providing its customers with the best power management solutions to meet their needs.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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