VB40150C-E3/8W Datasheet(PDF) - Vishay Siliconix

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VB40150C-E3/8W Datasheet (PDF) - Vishay Siliconix

VB40150C-E3/8W Datasheet PDF - Vishay Siliconix


Part #	VB40150C-E3/8W

Download	VB40150C-E3/8W Download

File Size	168.66 Kbytes

Page	5 Pages

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

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Description

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A

VB40150C-E3/8W Datasheet (PDF)

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VB40150C-E3/8W Datasheet PDF - Vishay Siliconix


Part #	VB40150C-E3/8W

Download	VB40150C-E3/8W Click to download

File Size	168.66 Kbytes

Page	5 Pages

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

Logo

Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A

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Similar Part No. - VB40150C-E3/8W

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	VB40150C-E3/8W	163Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 24-Jun-09

Similar Description - VB40150C-E3/8W

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About Vishay Siliconix

Vishay Siliconix is a subsidiary of Vishay Intertechnology, a global manufacturer of passive electronic components.
Vishay Siliconix specializes in the design, manufacturing, and marketing of power MOSFETs, IGBTs, and other power semiconductors.
The company was founded in 1962 and is headquartered in Santa Clara, California.
Vishay Siliconix provides power solutions for a variety of applications, including renewable energy systems, industrial equipment, computing and telecommunications, and automotive electronics.
The company's products are designed for high efficiency, low power consumption, and high reliability, and are manufactured in state-of-the-art facilities using advanced fabrication processes.
With a focus on innovation and customer satisfaction, Vishay Siliconix is committed to providing its customers with the best power management solutions to meet their needs.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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