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M36P0R9070E0 Datasheet (PDF) - Numonyx B.V

M36P0R9070E0 Datasheet PDF - Numonyx B.V
Part # M36P0R9070E0
Download  M36P0R9070E0 Download

File Size   468.7 Kbytes
Page   23 Pages
Manufacturer  NUMONYX [Numonyx B.V]
Direct Link  http://www.numonyx.com
Logo NUMONYX - Numonyx B.V
Description 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

M36P0R9070E0 Datasheet (PDF)

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M36P0R9070E0 Datasheet PDF - Numonyx B.V

Part # M36P0R9070E0
Download  M36P0R9070E0 Click to download

File Size   468.7 Kbytes
Page   23 Pages
Manufacturer  NUMONYX [Numonyx B.V]
Direct Link  http://www.numonyx.com
Logo NUMONYX - Numonyx B.V
Description 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

M36P0R9070E0 Datasheet (HTML) - Numonyx B.V

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M36P0R9070E0 Product details

Summary description
The M36P0R9070E0 combines two memory devices in one Multi-Chip Package:
● 512-Mbit Multiple Bank Flash memory (the M58PR512J).
● 128 Mbit PSRAM (the M69KB128AB).
The purpose of this document is to describe how the two memory components operate with respect to each other. It should be read in conjunction with the M58PRxxxJ and M69KB128AB datasheets, where all specifications required to operate the Flash memory and PSRAM components are fully detailed. The M58PR512J and M69KB128AB datasheets are available from www.numonyx.com.

Feature summary
■ Multi-Chip Package
    – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory
    – 1 die of 128Mbit (8Mb x16) PSRAM
■ Supply voltage
    – VDDF = VCCP = VDDQ = 1.7 to 1.95V
    – VPPF = 9V for fast program
■ Electronic signature
    – Manufacturer Code: 20h
    – Device Code: 8819
■ ECOPACK® package available

Flash memory
■ Synchronous / Asynchronous Read
    – Synchronous Burst Read mode: 108MHz, 66MHz
    – Asynchronous Page Read mode
    – Random Access: 96ns
■ Programming time
    – 4.2µs typical Word program time using Buffer Enhanced Factory Program command
■ Memory organization
    – Multiple bank memory array: 64 Mbit banks
    – Four Extended Flash Array (EFA) Blocks of 64 Kbits
■ Dual operations
    – program/erase in one Bank while read in others
    – No delay between read and write operations
■ Security
    – 2112-bit user programmable OTP Cells
    – 64-bit unique device number
■ 100,000 program/erase cycles per block
■ Common Flash Interface (CFI)
■ Block locking
    – All Blocks locked at power-up
    – Any combination of Blocks can be locked with zero latency
    – WPF for Block Lock-Down
    – Absolute Write Protection with VPPF = VSS

PSRAM
■ Access time: 70ns
■ User-selectable operating modes
    – Asynchronous modes: Random Read, and Write, Page Read
    – Synchronous modes: NOR-Flash, Full Synchronous (Burst Read and Write)
■ Asynchronous Page Read
    – Page Size: 4, 8 or 16 Words
    – Subsequent Read Within Page: 20ns
■ Burst Read
    – Fixed Length (4, 8, 16 or 32 Words) or Continuous
    – Maximum Clock Frequency: 80MHz
■ Low Power Consumption
    – Active Current: < 25mA
    – Standby Current: 200µA
    – Deep Power-Down Current: 10µA
■ Low Power Features
    – Partial Array Self Refresh (PASR)
    – Deep Power-Down (DPD) Mode




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