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HX6256 Datasheet (PDF) - Honeywell Solid State Electronics Center

HX6256 Datasheet PDF - Honeywell Solid State Electronics Center
Part No. HX6256
Download  HX6256 Click to view

File Size   780.95 Kbytes
Page   13 Pages
Manufacturer  HONEYWELL [Honeywell Solid State Electronics Center]
Direct Link  http://honeywell.com/Pages/Home.aspx
Logo HONEYWELL - Honeywell Solid State Electronics Center
Description 32K x 8 Static RAM

HX6256 Datasheet (PDF)

Go To PDF Page Download Datasheet
HX6256 Datasheet PDF - Honeywell Solid State Electronics Center

Part No. HX6256
Download  HX6256 Click to view

File Size   780.95 Kbytes
Page   13 Pages
Manufacturer  HONEYWELL [Honeywell Solid State Electronics Center]
Direct Link  http://honeywell.com/Pages/Home.aspx
Logo HONEYWELL - Honeywell Solid State Electronics Center
Description 32K x 8 Static RAM

HX6256 Datasheet (HTML) - Honeywell Solid State Electronics Center

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HX6256 Product details

The 32K x 8 Radiation Hardened Static RAM is a high performance 32,768 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in radiation environments. The RAM operates over the full military temperature range and requires only a single 5 V ± 10% power supply. The RAM is available with either TTL or CMOS compatible I/O. Power consumption is typically less than 15 mW/MHz in operation, and less than 5 mW when de-selected. The RAM read operation is fully asynchronous, with an associated typical access time of 17 ns at 5 V.

FEATURES
RADIATION
• Fabricated with RICMOS™ IV Silicon on Insulator (SOI) 0.7 µm Process (Leff = 0.6 µm)
• Total Dose Hardness through 1x106 rad(SiO2)
• Neutron Hardness through 1x1014 cm-2
• Dynamic and Static Transient Upset Hardness through 1x109 rad(Si)/s
• Dose Rate Survivability through 1x1011 rad(Si)/s
• Soft Error Rate of <1x10-10 upsets/bit-day in Geosynchronous Orbit
• No Latchup

OTHER
• Listed On SMD#5962–95845
• Fast Cycle Times
    o ≤ 17 ns (Typical)
    o ≤ 25 ns (-55 to 125°C) Read Write Cycle
• Asynchronous Operation
    o CMOS or TTL Compatible I/O
• Single 5 V ± 10% Power Supply
• Packaging Options
    o 28-Lead CFP (0.500 in. x 0.720 in.)
    o 28-Lead DIP, MIL-STD-1835, CDIP2-T28
    o 36-Lead CFP—Bottom Braze (0.630 x 0.650 in.)
    o 36-Lead CFP—Top Braze (0.630 x 0.650 in.)



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About Honeywell Solid State Electronics Center


Honeywell Solid State Electronics Center (SSEC) was a research and development facility of Honeywell Inc. that operated from 1957 to 1993 in Minneapolis, Minnesota, United States. The center was dedicated to the research, development, and production of solid-state electronics, including microelectronics, semiconductors, and related technologies.

During its operation, SSEC made significant contributions to the advancement of the semiconductor industry, particularly in the areas of integrated circuits, transistor design, and fabrication processes. Notable accomplishments of SSEC include the development of the first silicon transistor, the first commercial silicon planar transistor, and the first integrated circuit to use metal oxide semiconductor (MOS) technology.

In 1993, Honeywell closed the SSEC facility as part of a broader restructuring of its operations. The company's semiconductor business was subsequently sold to SGS-Thomson (now STMicroelectronics) in 1999.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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