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LH28F800BJB-PTTL90 Datasheet (PDF) - Sharp Corporation

LH28F800BJB-PTTL90 Datasheet PDF - Sharp Corporation
Part # LH28F800BJB-PTTL90
Download  LH28F800BJB-PTTL90 Download
File Size   683.47 Kbytes
Page   47 Pages
Manufacturer  SHARP [Sharp Corporation]
Direct Link  http://sharp-world.com/
Logo SHARP - Sharp Corporation
Description 8M (x8/x16) Flash Memory

LH28F800BJB-PTTL90 Datasheet (PDF)

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LH28F800BJB-PTTL90 Datasheet PDF - Sharp Corporation

Part # LH28F800BJB-PTTL90
Download  LH28F800BJB-PTTL90 Click to download

File Size   683.47 Kbytes
Page   47 Pages
Manufacturer  SHARP [Sharp Corporation]
Direct Link  http://sharp-world.com/
Logo SHARP - Sharp Corporation
Description 8M (x8/x16) Flash Memory

LH28F800BJB-PTTL90 Datasheet (HTML) - Sharp Corporation


LH28F800BJB-PTTL90 Product details

8M-BIT ( 512Kbit ×16 / 1Mbit ×8 ) Boot Block Flash MEMORY

The product is a high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications.
The product can operate at VCC=2.7V-3.6V and VCCW=2.7V-3.6V or 11.7V-12.3V. Its low voltage operation capability realize battery life and suits for cellular phone application.
Its Boot, Parameter and Main-blocked architecture, low voltage and extended cycling provide for highly flexible component suitable for portable terminals and personal computers. Its enhanced suspend capabilities provide for an ideal solution for code + data storage applications.

■ Low Voltage Operation
   ― VCC=VCCW=2.7V-3.6V Single Voltage
■ OTP(One Time Program) Block
   ― 3963 word + 4 word Program only array
■ User-Configurable ×8 or ×16 Operation
■ High-Performance Read Access Time
   ― 90ns(VCC=2.7V-3.6V)
■ Operating Temperature
   ― 0°C to +70°C
■ Low Power Management
   ― Typ. 2µA (VCC=3.0V) Standby Current
   ― Automatic Power Savings Mode Decreases ICCR in Static Mode
   ― Typ. 120µA (VCC=3.0V, TA=+25°C, f=32kHz) Read Current
■ Optimized Array Blocking Architecture
   ― Two 4K-word (8K-byte) Boot Blocks
   ― Six 4K-word (8K-byte) Parameter Blocks
   ― Fifteen 32K-word (64K-byte) Main Blocks
   ― Top Boot Location
■ Extended Cycling Capability
   ― Minimum 100,000 Block Erase Cycles
■ Enhanced Automated Suspend Options
   ― Word/Byte Write Suspend to Read
   ― Block Erase Suspend to Word/Byte Write
   ― Block Erase Suspend to Read
■ Enhanced Data Protection Features
   ― Absolute Protection with VCCW≤VCCWLK
   ― Block Erase, Full Chip Erase, Word/Byte Write and Lock-Bit Configuration Lockout during Power Transitions
   ― Block Locking with Command and WP#
   ― Permanent Locking
■ Automated Block Erase, Full Chip Erase, Word/Byte Write and Lock-Bit Configuration
   ― Command User Interface (CUI)
   ― Status Register (SR)
■ SRAM-Compatible Write Interface
■ Chip-Size Packaging
   ― 48-Ball CSP
■ ETOXTM* Nonvolatile Flash Technology
■ CMOS Process (P-type silicon substrate)
■ Not designed or rated as radiation hardened




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About Sharp Corporation


Sharp Corporation is a Japanese electronics company that was founded in 1912.
The company provides a wide range of products including consumer electronics, such as LCD TVs, home appliances, and solar panels, as well as industrial products such as LCD displays, solar cells, and electronic components.
Sharp has a long history of innovation and is known for its expertise in the development of cutting-edge technologies such as high-resolution displays, energy-efficient power solutions, and renewable energy.
The company has operations in several countries and is one of the leading electronics manufacturers in the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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