Features
• RDS(on) = 770 m (Typ.) @ VGS = 10 V, ID = 4 A
• Low Gate Charge (Typ. 14 nC)
• Low Crss (Typ. 5 pF)
• 100% Avalanche Tested
• Improve dv/dt Capability
• ESD Improved Capability
• RoHS Compliant

Applications
• LCD/LED TV • Uninterruptible Power Supply
• Lighting • AC-DC Power Supply

Description
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest
on-state resistance among the planar MOSFET, and also
provides superior switching performance and higher avalanche
energy strength. In addition, internal gate-source ESD diode
allows UniFET II MOSFET to withstand over 2kV HBM surge
stress. This device family is suitable for switching power
converter applications such as power factor correction (PFC),
flat panel display (FPD) TV power, ATX and electronic lamp
ballasts.