Manufacturer | Part # | Datasheet | Description |
 Samsung semiconductor |
KM44C4003C
|
376Kb / 20P |
4M x 4Bit CMOS Quad CAS DRAM with Fast Page Mode
|
KM44C4005C
|
378Kb / 20P |
4M x 4Bit CMOS Quad CAS DRAM with Extended Data Out
|
 Siemens Semiconductor G... |
HYM324025S
|
52Kb / 10P |
4M x 32-Bit EDO-DRAM Module
|
HYM364035S
|
476Kb / 10P |
4M x 36-Bit EDO-DRAM Module
|
HYM64V4005GU-50
|
95Kb / 17P |
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module
|
HYM72V4005GS-50-
|
70Kb / 11P |
4M x 72-Bit EDO-DRAM Module
|
 Hynix Semiconductor |
HY51VS17403HG
|
96Kb / 11P |
4M x 4Bit EDO DRAM
|
HY51VS65163HG
|
96Kb / 11P |
4M x 16Bit EDO DRAM
|
 Samsung semiconductor |
KMM5361205C2W
|
289Kb / 17P |
1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
|
KMM5362205C2W
|
296Kb / 17P |
2M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
|