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CSNR381 Datasheet (PDF) - Honeywell Solid State Electronics Center

CSNR381 Datasheet PDF - Honeywell Solid State Electronics Center
Part # CSNR381
Download  CSNR381 Download

File Size   712.58 Kbytes
Page   9 Pages
Manufacturer  HONEYWELL [Honeywell Solid State Electronics Center]
Direct Link  http://honeywell.com/Pages/Home.aspx
Logo HONEYWELL - Honeywell Solid State Electronics Center
Description Solid State Sensors Closed Loop Current Sensors

CSNR381 Datasheet (PDF)

Go To PDF Page Download Datasheet
CSNR381 Datasheet PDF - Honeywell Solid State Electronics Center

Part # CSNR381
Download  CSNR381 Click to download

File Size   712.58 Kbytes
Page   9 Pages
Manufacturer  HONEYWELL [Honeywell Solid State Electronics Center]
Direct Link  http://honeywell.com/Pages/Home.aspx
Logo HONEYWELL - Honeywell Solid State Electronics Center
Description Solid State Sensors Closed Loop Current Sensors

CSNR381 Datasheet (HTML) - Honeywell Solid State Electronics Center

CSNR381 Datasheet HTML 1Page - Honeywell Solid State Electronics Center CSNR381 Datasheet HTML 2Page - Honeywell Solid State Electronics Center CSNR381 Datasheet HTML 3Page - Honeywell Solid State Electronics Center CSNR381 Datasheet HTML 4Page - Honeywell Solid State Electronics Center CSNR381 Datasheet HTML 5Page - Honeywell Solid State Electronics Center CSNR381 Datasheet HTML 6Page - Honeywell Solid State Electronics Center CSNR381 Datasheet HTML 7Page - Honeywell Solid State Electronics Center CSNR381 Datasheet HTML 8Page - Honeywell Solid State Electronics Center CSNR381 Datasheet HTML 9Page - Honeywell Solid State Electronics Center

CSNR381 Product details

DESCRIPTION

These new industrial current sensors extend Honeywell’s closed loop current sensing capability. They offer increased current measuring capability up to 1000Aover an extended temperature range of -40°C to +85°C and are available with different terminal options.

The sensors are closed loop devices based on the principle of the hall effect and null balance method. The output from the current sensor is the balancing current which is a perfect image of the primary current reduced by the number of secondary turns at any time. This current can be expressed as a voltage by passing it through a resistor.



FEATURES

• Current sensing up to 1000A

• Measures DC, AC and impulse currents

• Very fast response

• High overload capability

• Extended temperature range -40°C to +85°C

• Different termination styles

• Optional conformal coating



BENEFITS

• Increased measuring range in compact package

• No restriction on input current waveform

• Output signal accurately tracks changes in input signal

• Sensor integrity unaffected

• Improved reliability

• Flexibility of connection style

• Provides additional protection to the sensors



TYPICAL APPLICATIONS

• Variable speed drives

• Overcurrent protection

• Power supplies

• Feedback control systems

• Robotics

• Welding equipment



 




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About Honeywell Solid State Electronics Center


Honeywell Solid State Electronics Center (SSEC) was a research and development facility of Honeywell Inc. that operated from 1957 to 1993 in Minneapolis, Minnesota, United States. The center was dedicated to the research, development, and production of solid-state electronics, including microelectronics, semiconductors, and related technologies.

During its operation, SSEC made significant contributions to the advancement of the semiconductor industry, particularly in the areas of integrated circuits, transistor design, and fabrication processes. Notable accomplishments of SSEC include the development of the first silicon transistor, the first commercial silicon planar transistor, and the first integrated circuit to use metal oxide semiconductor (MOS) technology.

In 1993, Honeywell closed the SSEC facility as part of a broader restructuring of its operations. The company's semiconductor business was subsequently sold to SGS-Thomson (now STMicroelectronics) in 1999.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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