Description
Cree’s CMPA2735075D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated
circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher
saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths
compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide
bandwidths to be achieved.
Features
• 30 dB Small Signal Gain
• 80 W Typical PSAT
• Operation up to 28 V
• High Breakdown Voltage
• High Temperature Operation
• Size 0.197 x 0.174 x 0.004 inches
Applications
• Civil and Military Pulsed Radar Amplifiers